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NX3L1G3157GW Datasheet(PDF) 10 Page - NXP Semiconductors |
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NX3L1G3157GW Datasheet(HTML) 10 Page - NXP Semiconductors |
10 / 22 page NX3L1G3157_8 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 08 — 26 April 2010 10 of 22 NXP Semiconductors NX3L1G3157 Low-ohmic single-pole double-throw analog switch 12. Dynamic characteristics (1) Tamb = 125 °C. (2) Tamb =85 °C. (3) Tamb =25 °C. (4) Tamb = −40 °C. (1) Tamb = 125 °C. (2) Tamb =85 °C. (3) Tamb =25 °C. (4) Tamb = −40 °C. Fig 13. ON resistance as a function of input voltage; VCC =3.3 V Fig 14. ON resistance as a function of input voltage; VCC =4.3 V VI (V) 04 3 12 001aag569 0.4 0.6 0.2 0.8 1.0 RON ( Ω) 0 (1) (2) (3) (4) VI (V) 05 4 23 1 001aaj896 0.4 0.6 0.2 0.8 1.0 RON ( Ω) 0 (1) (2) (3) (4) Table 9. Dynamic characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V); for load circuit see Figure 17. Symbol Parameter Conditions Tamb = 25 °C Tamb = −40 °C to +125 °C Unit Min Typ[1] Max Min Max (85 °C) Max (125 °C) ten enable time S to Z or Yn; see Figure 15 VCC = 1.4 V to 1.6 V - 28 43 - 48 52 ns VCC = 1.65 V to 1.95 V - 23 35 - 38 42 ns VCC = 2.3 V to 2.7 V - 17 27 - 29 32 ns VCC = 2.7 V to 3.6 V - 14 25 - 27 30 ns VCC = 3.6 V to 4.3 V - 14 25 - 27 30 ns tdis disable time S to Z or Yn; see Figure 15 VCC = 1.4 V to 1.6 V - 9 20 - 25 30 ns VCC = 1.65 V to 1.95 V - 6 15 - 20 23 ns VCC = 2.3 V to 2.7 V - 5 11 - 14 16 ns VCC = 2.7 V to 3.6 V - 4 10 - 12 14 ns VCC = 3.6 V to 4.3 V - 4 10 - 12 14 ns |
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