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ACST6610-8R Datasheet(PDF) 2 Page - STMicroelectronics |
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ACST6610-8R Datasheet(HTML) 2 Page - STMicroelectronics |
2 / 15 page Characteristics ACST6 2/15 Doc ID 7297 Rev 9 1 Characteristics Table 2. Absolute ratings (limiting values) Symbol Parameter Value Unit IT(RMS) On-state rms current (full sine wave) TO-220FPAB Tc = 92 °C 6 A TO-220AB/ D²PAK / I²PAK Tc = 106 °C D²PAK with 1cm2 copper Tamb = 62 °C 1.5 ITSM Non repetitive surge peak on-state current Tj initial = 25 °C, ( full cycle sine wave) F = 60 Hz tp = 16.7 ms 47 A F = 50 Hz tp = 20 ms 45 A I2tI2t for fuse selection tp = 10 ms 13 A2s dI/dt Critical rate of rise on-state current IG = 2 x IGT, (tr ≤ 100 ns) F = 120 Hz Tj = 125 °C 100 A/µs VPP Non repetitive line peak pulse voltage (1) Tj = 25 °C 2 kV PG(AV) Average gate power dissipation Tj = 125 °C 0.1 W PGM Peak gate power dissipation (tp = 20 µs) Tj = 125 °C 10 W IGM Peak gate current (tp = 20 µs) Tj = 125 °C 1.6 A Tstg Storage temperature range -40 to +150 °C Tj Operating junction temperature range -40 to +125 °C Tl Maximum lead solder temperature during 10 ms (at 3 mm from plastic case) 260 °C VINS(RMS) Insulation rms voltage TO-220FPAB 1500 V 1. According to test described in IEC 61000-4-5 standard and Figure 19. Table 3. Electrical characteristics Symbol Test conditions Quadrant Tj Value Unit IGT (1) VOUT = 12 V, RL = 33 Ω I - II - III 25 °C MAX. 10 mA VGT VOUT = 12 V, RL = 33 Ω I - II - III 25 °C MAX. 1.0 V VGD VOUT = VDRM, RL = 3.3 kΩ I - II - III 125 °C MIN. 0.2 V IH (2) IOUT = 500 mA 25 °C MAX. 25 mA IL IG = 1.2 x IGT I - III 25 °C MAX. 30 mA IL IG = 1.2 x IGT II 25 °C MAX. 40 mA dV/dt(2) VOUT = 67 % VDRM, gate open 125 °C MIN. 500 V/µs (dI/dt)c (2) (dV/dt)c = 15 V/µs 125 °C MIN. 3.5 A/ms VCL ICL = 0.1 mA, tp = 1 ms 25 °C MIN. 850 V 1. Minimum IGT is guaranteed at 5% of IGT max 2. For both polarities of OUT pin referenced to COM pin |
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