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ZTX688 Datasheet(PDF) 1 Page - Zetex Semiconductors |
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ZTX688 Datasheet(HTML) 1 Page - Zetex Semiconductors |
1 / 3 page NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 2 MAY 94 FEATURES * 12 Volt VCEO * Gain of 400 at IC=3 Amps * Very low saturation voltage APPLICATIONS * Darlington replacement * Flash gun convertors * Battery powered circuits * Motor drivers ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 12 V Collector-Emitter Voltage VCEO 12 V Emitter-Base Voltage VEBO 5V Peak Pulse Current ICM 10 A Continuous Collector Current IC 3A Practical Power Dissipation* Ptotp 1.5 W Power Dissipation at Tamb=25°C derate above 25°C Ptot 1 5.7 W mW/°C Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 1 inch square minimum ELECTRICAL CHARACTERISTICS (at Tamb= 25°C) PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO 12 V IC=100µA Collector-Emitter Breakdown Voltage V(BR)CEO 12 V IC=10mA* Emitter-Base Breakdown Voltage V(BR)EBO 5V IE=100µA Collector Cut-Off Current ICBO 0.1 µ A VCB=10V Emitter Cut-Off Current IEBO 0.1 µ A VEB=4V Collector-Emitter Saturation Voltage VCE(sat) 0.04 0.06 0.18 0.35 V V V V IC=0.1A, IB=1mA IC=0.1A, IB=0.5mA* IC=1A, IB=50mA* IC=3A, IB=20mA* Base-Emitter Saturation Voltage VBE(sat) 1.1 V IC=3A, IB=20mA* Base-Emitter Turn-On Voltage VBE(on) 1 V IC=3A, VCE=2V* Static Forward Current Transfer Ratio hFE 500 400 100 IC=0.1A, VCE=2V* IC=3A, VCE=2V* IC=10A, VCE=2V* E-Line TO92 Compatible ZTX688B 3-232 C B E ELECTRICAL CHARACTERISTICS (at Tamb= 25°C) PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Transition Frequency fT 150 MHz IC=50mA, VCE=5V f=50MHz Input Capacitance Cibo 200 pF VEB=0.5V, f=1MHz Output Capacitance Cobo 40 pF VCB=10V, f=1MHz Switching Times ton toff 40 500 ns ns IC=500mA, IB1=50mA IB2=50mA, VCC=10V *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% THERMAL CHARACTERISTICS PARAMETER SYMBOL MAX. UNIT Thermal Resistance:Junction to Ambient1 Junction to Ambient2 Junction to Case Rth(j-amb)1 Rth(j-amb)2 Rth(j-case) 175 116 70 °C/W °C/W °C/W Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum. ZTX688B -40 0.0001 Derating curve T -Temperature (°C) Maximum transient thermal impedance Pulse Width (seconds) 10 100 1 0.1 0.01 -20 0 20 40 60 80 100 120 200 180 160 140 0.001 0 100 200 D=0.2 D=0.1 Single Pulse D=0.5 t1 tP D=t1/tP 1.0 0.5 2.0 1.5 Case temperature 2.5 Ambient temperat ure 0 D=1 (D.C.) 3-233 |
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