IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.

IXGA30N60C3C1 IXGP30N60C3C1

IXGH30N60C3C1

Symbol Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

I

9

16

S

C

ies

1075

pF

C

oes

V

196

pF

C

res

29

pF

Q

g

38

nC

Q

ge

I

8

nC

Q

gc

17

nC

t

d(on)

17

ns

t

ri

20

ns

E

on

0.12

mJ

t

d(off)

42

75

ns

t

fi

47

ns

E

off

0.09

0.18

mJ

t

d(on)

16

ns

t

ri

21

ns

E

on

0.16

mJ

t

d(off)

70

ns

t

fi

90

ns

E

off

0.33

mJ

R

thJC

0.56 °C/W

R

thCS

TO-220

0.50

°C/W

TO-247

0.21

°C/W

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2 7,157,338B2

by one or more of the following U.S. patents: 4,850,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2 6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

Inductive Load, T

I

V

Note 2

Inductive Load, T

I

V

Note 2

Reverse Diode (SiC)

Symbol Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

V

F

I

1.65

2.10

V

T

1.80

V

R

thJC

1.10 °C/W

PRELIMINARY TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are derived

from data gathered during objective characterizations of preliminary engineering lots; but also may yet

contain some information supplied during a pre-production design evaluation. IXYS reserves the right

to change limits, test conditions, and dimensions without notice.

Notes

1. Pulse test, t

≤ 300μs, duty cycle, d ≤ 2%.

2. Switching times & energy losses may increase for higher V