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BQ24610_1002 Datasheet(PDF) 5 Page - Texas Instruments

Part # BQ24610_1002
Description  Stand-Alone Synchronous Switch-Mode Li-Ion or Li-Polymer Battery Charger with System Power Selector and Low Iq
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Manufacturer  TI [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI - Texas Instruments

BQ24610_1002 Datasheet(HTML) 5 Page - Texas Instruments

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SLUS892 – DECEMBER 2009
ELECTRICAL CHARACTERISTICS (continued)
5.0V
≤ V(VCC) ≤ 28V, 0°C < TJ < +125°C, typical values are at TA = 25°C, with respect to GND (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
CHARGE TERMINATION
Termination current set factor (Amps of
KTERM
termination current per volt on ISET2
RSENSE = 10 mΩ
1
A/V
pin)
VITERM = 20 mV
–4%
4%
Termination current accuracy
VITERM = 5 mV
–25%
25%
VITERM = 1.5 mV
–45%
45%
Deglitch time for termination (both edge)
100
ms
tQUAL
Termination qualification time
VBAT>VRECH and ICHG<ITERM
250
ms
IQUAL
Termination qualification current
Discharge current once termination is detected
2
mA
INPUT CURRENT REGULATION
VACSET
ACSET Voltage Range
2
V
ACP-ACN Current Sense Voltage
VIREG_DPM
VIREG_DPM = VACP – VACN
100
mV
Range
Input current set factor (amps of input
KACSET
RSENSE = 10 mΩ
5
A/V
current per volt on ACSET pin)
VIREG_DPM = 40 mV
–3%
3%
Input current regulation accuracy
IACSET
VIREG_DPM = 20 mV
–4%
4%
leakage current in to ACSET pin
VIREG_DPM = 5 mV
–25%
25%
IISET1
Leakage current in to ACSET pin
VACSET = 2 V
100
nA
INPUT UNDER-VOLTAGE LOCK-OUT COMPARATOR (UVLO)
VUVLO
AC Under-voltage rising threshold
Measure on VCC
3.65
3.85
4
V
VUVLO_HYS
AC Under-voltage hysteresis, falling
350
mV
VCC LOWV COMPARATOR
Falling threshold, disable charge
Measure on VCC
4.1
V
Rising threshold, resume charge
4.35
4.5
V
SLEEP COMPARATOR (REVERSE DISCHARGING PROTECTION)
VSLEEP _FALL
SLEEP falling threshold
VVCC – VSRN to enter SLEEP
40
100
150
mV
VSLEEP_HYS
SLEEP hysteresis
500
mV
SLEEP rising delay
VCC falling below SRN, Delay to turn off ACFET
1
μs
SLEEP falling delay
VCC rising above SRN, Delay to turn on ACFET
30
μs
SLEEP rising shutdown deglitch
VCC falling below SRN, Delay to enter SLEEP mode
100
ms
SLEEP falling powerup deglitch
VCC rising above SRN, Delay to exit SLEEP mode
30
ms
ACN / SRN COMPARATOR
VACN-SRN_FALL
ACN to SRN falling threshold
VACN – VSRN to turn on BATFET
100
200
310
mV
VACN-SRN_HYS
ACN to SRN rising hysteresis
100
mV
ACN to SRN rising deglitch
VACN – VSRN > VACN-SRN_RISE
2
ms
ACN to SRN falling deglitch
VACN – VSRN < VACN-SRN_FALL
50
μs
BAT LOWV COMPARATOR
Precharge to fastcharge transition
VLOWV
Measured on VFB pin, Rising
1.534
1.55
1.566
V
(LOWV threshold)
VLOWV_HYS
LOWV hysteresis
100
mV
LOWV rising deglitch
VFB falling below VLOWV
25
ms
LOWV falling deglitch
VFB rising above VLOWV + VLOWV_HYS
25
ms
RECHARGE COMPARATOR
Recharge threshold (with-respect-to
VRECHG
Measured on VFB pin, Falling
35
50
65
mV
VREG)
Recharge rising deglitch
VFB decreasing below VRECHG
10
ms
Recharge falling deglitch
VFB decreasing above VRECHG
10
ms
Copyright © 2009, Texas Instruments Incorporated
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