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BQ24610_1002 Datasheet(PDF) 5 Page - Texas Instruments |
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BQ24610_1002 Datasheet(HTML) 5 Page - Texas Instruments |
5 / 32 page bq24610 bq24617 www.ti.com SLUS892 – DECEMBER 2009 ELECTRICAL CHARACTERISTICS (continued) 5.0V ≤ V(VCC) ≤ 28V, 0°C < TJ < +125°C, typical values are at TA = 25°C, with respect to GND (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT CHARGE TERMINATION Termination current set factor (Amps of KTERM termination current per volt on ISET2 RSENSE = 10 mΩ 1 A/V pin) VITERM = 20 mV –4% 4% Termination current accuracy VITERM = 5 mV –25% 25% VITERM = 1.5 mV –45% 45% Deglitch time for termination (both edge) 100 ms tQUAL Termination qualification time VBAT>VRECH and ICHG<ITERM 250 ms IQUAL Termination qualification current Discharge current once termination is detected 2 mA INPUT CURRENT REGULATION VACSET ACSET Voltage Range 2 V ACP-ACN Current Sense Voltage VIREG_DPM VIREG_DPM = VACP – VACN 100 mV Range Input current set factor (amps of input KACSET RSENSE = 10 mΩ 5 A/V current per volt on ACSET pin) VIREG_DPM = 40 mV –3% 3% Input current regulation accuracy IACSET VIREG_DPM = 20 mV –4% 4% leakage current in to ACSET pin VIREG_DPM = 5 mV –25% 25% IISET1 Leakage current in to ACSET pin VACSET = 2 V 100 nA INPUT UNDER-VOLTAGE LOCK-OUT COMPARATOR (UVLO) VUVLO AC Under-voltage rising threshold Measure on VCC 3.65 3.85 4 V VUVLO_HYS AC Under-voltage hysteresis, falling 350 mV VCC LOWV COMPARATOR Falling threshold, disable charge Measure on VCC 4.1 V Rising threshold, resume charge 4.35 4.5 V SLEEP COMPARATOR (REVERSE DISCHARGING PROTECTION) VSLEEP _FALL SLEEP falling threshold VVCC – VSRN to enter SLEEP 40 100 150 mV VSLEEP_HYS SLEEP hysteresis 500 mV SLEEP rising delay VCC falling below SRN, Delay to turn off ACFET 1 μs SLEEP falling delay VCC rising above SRN, Delay to turn on ACFET 30 μs SLEEP rising shutdown deglitch VCC falling below SRN, Delay to enter SLEEP mode 100 ms SLEEP falling powerup deglitch VCC rising above SRN, Delay to exit SLEEP mode 30 ms ACN / SRN COMPARATOR VACN-SRN_FALL ACN to SRN falling threshold VACN – VSRN to turn on BATFET 100 200 310 mV VACN-SRN_HYS ACN to SRN rising hysteresis 100 mV ACN to SRN rising deglitch VACN – VSRN > VACN-SRN_RISE 2 ms ACN to SRN falling deglitch VACN – VSRN < VACN-SRN_FALL 50 μs BAT LOWV COMPARATOR Precharge to fastcharge transition VLOWV Measured on VFB pin, Rising 1.534 1.55 1.566 V (LOWV threshold) VLOWV_HYS LOWV hysteresis 100 mV LOWV rising deglitch VFB falling below VLOWV 25 ms LOWV falling deglitch VFB rising above VLOWV + VLOWV_HYS 25 ms RECHARGE COMPARATOR Recharge threshold (with-respect-to VRECHG Measured on VFB pin, Falling 35 50 65 mV VREG) Recharge rising deglitch VFB decreasing below VRECHG 10 ms Recharge falling deglitch VFB decreasing above VRECHG 10 ms Copyright © 2009, Texas Instruments Incorporated Submit Documentation Feedback 5 Product Folder Link(s): bq24610 bq24617 |
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