BZV55_SER_4

© NXP B.V. 2007. All rights reserved.

Product data sheet

Rev. 04 — 19 July 2007

2 of 12

NXP Semiconductors

BZV55 series

Voltage regulator diodes

3.

Ordering information

[1]

The series consists of 74 types with nominal working voltages from 2.4 V to 75 V.

4.

Marking

[1]

blue: made in China

yellow: made in Philippines

5.

Limiting values

[1]

[2]

Device mounted on a ceramic substrate of 10

× 10 × 0.6 mm.

6.

Thermal characteristics

[1]

Device mounted on a ceramic substrate of 10

× 10 × 0.6 mm.

Table 3.

Ordering information

Type number

Package

Name

Description

Version

BZV55-B2V4 to

BZV55-C75[1]

-

hermetically sealed glass surface-mounted

package; 2 connectors

SOD80C

Table 4.

Marking codes

Type number

Marking code[1]

BZV55-B2V4 to BZV55-C75

marking band

Table 5.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

forward current

-

250

mA

non-repetitive peak reverse

current

[1] -

see

Table 8

and 9

non-repetitive peak reverse

power dissipation

[1] -40

W

total power dissipation

[2] -

400

mW

[2] -

500

mW

storage temperature

−65

+200

°C

junction temperature

−65

+200

°C

Table 6.

Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

thermal resistance from

junction to ambient

in free air

[1] -

-

380

K/W

thermal resistance from

junction to tie-point

-

-

300

K/W