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BZA100 Datasheet(PDF) 2 Page - NXP Semiconductors |
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BZA100 Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 7 page 1997 Dec 02 2 NXP Semiconductors Product data sheet 18-fold ESD transient voltage suppressor BZA100 FEATURES • SO20 SMD package allows 18 separate voltage regulator diodes in a common anode configuration • Working voltage: typ. 6.8 V • Forward voltage: max. 1.3 V • Maximum reverse peak power dissipation: 27.5 W at tp = 1 ms • Maximum clamping voltage at peak pulse current: 11 V at 2.5 A • Low leakage current: max. 2 µA • ESD rating >8 kV, according IEC 801-2. APPLICATIONS • Where transient overvoltage protection in voltage and ESD sensitive equipment is required such as: –Computers –Printers – Business machines – Communication systems – Medical equipment. DESCRIPTION 18-fold monolitic transient voltage suppressor. Its 18-fold junction common anode design protects 18 separate lines using only one package. This device is ideal for situations where board space is a premium. PINNING PIN DESCRIPTION 1 to 5 cathode (k1 to k5) 6 and 16 common anode (a1; a2) 7 to 15 cathode (k6 to k14) 17 to 20 cathode (k15 to k18) Fig.1 Pin configuration for SO20 (SOT163-1) and symbol. handbook, 4 columns SO20 MBG396 1 2 3 4 5 6 7 8 9 10 20 19 18 17 16 15 14 13 12 11 19 18 17 16 15 14 13 12 11 20 2 3 4 5 6 7 8 9 10 1 k18 k1 k17 k2 k16 k3 k15 k4 a2 k5 k14 a1 k13 k6 k12 k7 k11 k8 k10 k9 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). Notes 1. DC working current limited by Ptot max. 2. One or more diodes loaded; Ts is the temperature at the soldering point. 3. One or more diodes loaded; device mounted on a printed-circuit board with Rth a-s = 43.5 K/W. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT IZ working current − note 1 mA IF continuous forward current − 200 mA IFSM non-repetitive peak forward current tp = 1 ms; square pulse − 4 A IZSM non-repetitive peak reverse current tp = 1 ms; square pulse; see Fig.2 − 2.5 A Ptot total power dissipation see Fig.3 up to Ts = 60 °C; note 2 − 1.6 W up to Tamb = 25 °C; note 3 − 1.25 W PZSM non-repetitive peak reverse power dissipation tp = 1 ms; square pulse; see Fig.4 − 27.5 W Tstg storage temperature −65 +150 °C Tj operating junction temperature − 150 °C |
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