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BUK7909-75ATE Datasheet(PDF) 8 Page - NXP Semiconductors |
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BUK7909-75ATE Datasheet(HTML) 8 Page - NXP Semiconductors |
8 / 15 page BUK7909-75ATE_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 16 February 2009 8 of 15 NXP Semiconductors BUK7909-75ATE N-channel TrenchPLUS standard level FET Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values Fig 6. Drain-source on-state resistance as a function of gate-source voltage; typical values Fig 7. Drain-source on-state resistance as a function of drain current; typical values Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature 03ni80 0 70 140 210 280 350 02468 10 VDS (V) ID (A) 4.5 5 5.5 6 6.5 7 7.5 8 8.5 9 10 20 label is VGS (V) 03ni82 6 8 10 12 14 16 510 15 20 VGS (V) RDSon (m Ω) 03ni81 0 5 10 15 20 0 100 200 300 400 ID (A) RDSon (m Ω) VGS = 5.5V 6 V 6.5V 7 V 8 V 10 V 20 V Tj (°C) −60 180 120 060 03nb25 0.8 1.6 2.4 a 0 |
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