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ZTX323 Datasheet(PDF) 1 Page - Zetex Semiconductors |
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ZTX323 Datasheet(HTML) 1 Page - Zetex Semiconductors |
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1 / 2 page  NPN SILICON PLANAR HIGH SPEED SWITCHING TRANSISTORS ISSUE 3 APRIL 94 FEATURES * 15 Volt VCEO *fT=600 MHz APPLICATIONS * VHF/UHF operation ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 30 V Collector-Emitter Voltage VCEO 15 V Emitter-Base Voltage VEBO 3V Base Current IB 100 mA Continuous Collector Current IC 500 mA Power Dissipation at Tamb=25°C Ptot 300 mW Operating and Storage Temperature Range Tj:Tstg -55 to +175 °C ELECTRICAL CHARACTERISTICS (at Tamb= 25°C). PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO 30 V IC=10µA, IE=0 Collector-Emitter Sustaining Voltage VCEO(SUS) 15 V IC=10mA, IB=0 Emitter-Base Breakdown Voltage V(BR)EBO 3V IE=10µA, IC=0 Collector Cut-Off Current ICBO 0.01 µ A VCB=15V, IE=0 Emitter Cut-Off Current IEBO 0.2 µ A VEB=2V, IC=0 Collector-Emitter Saturation Voltage ZTX320, ZTX322 ZTX323 ZTX321 VCE(sat) 0.4 0.4 0.4 V V V IC=10mA, IB=1mA IC=10mA, IB=1mA IC=3mA, IB=0.3mA Base-Emitter Saturation Voltage ZTX320, ZTX322 ZTX323 ZTX321 VBE(sat) 1.0 1.0 1.0 V V V IC=10mA, IB=1mA IC=10mA, IB=1mA IC=3mA, IB=0.3mA Static Forward Current Transfer Ratio ZTX320, ZTX321 ZTX322 ZTX323 hFE 20 20 100 300 150 300 IC=3mA, VCE=1V IC=3mA, VCE=1V IC=3mA, VCE=1V Output Capacitance Cobo 1.7 pF VCB=10V, f=1MHz Input Capacitance Cibo 1.6 pF VEB=0.5V, f=1MHz Transition Frequency at f=100MHz fT 600 400 MHz MHz IC=4mA, VCE=10V IC=30mA, VCE=10V Noise Figure N 6 dB IE=1mA, VCE=6V RS=400Ω, f=60MHz Power Gain gpe typical 15 dB IC=6mA, VCB=12V f=200MHz E-Line TO92 Compatible ZTX320 ZTX321 ZTX322 ZTX323 3-159 C B E TYPICAL CHARACTERISTICS fT v IC IC (mA) 0 5 10 15 20 25 800 600 400 0 200 1000 VCE=10V f=100MHz 0.1 0.2 0.3 0.4 T - Temperature (°C) 0 -60 -20 20 60 100 140 180 0 Derating Curve ZTX320 ZTX321 ZTX322 ZTX323 3-160 |
Similar Part No. - ZTX323 |
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Similar Description - ZTX323 |
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