BUK7230-55A datasheet(2/13 Pages) NXP

Part #	BUK7230-55A

Description	N-channel TrenchMOS standard level FET

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Manufacturer	NXP [NXP Semiconductors]

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BUK7230-55A_2

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Product data sheet

Rev. 02 — 16 March 2010

2 of 13

NXP Semiconductors

BUK7230-55A

N-channel TrenchMOS standard level FET

2.

Pinning information

3.

Ordering information

4.

Limiting values

[1]

Peak drain current is limited by chip, not package.

Table 2.

Pinning information

Symbol

Description

Simplified outline

Graphic symbol

1G

gate

SOT428 (DPAK)

2D

drain

3S

source

mb

D

mounting base; connected to

drain

3

2

mb

1

S

D

G

mbb076

Table 3.

Ordering information

Type number

Package

Name

Description

Version

BUK7230-55A

DPAK

plastic single-ended surface-mounted package (DPAK); 3 leads (one

lead cropped)

SOT428

Table 4.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

VDS

drain-source voltage

Tj ≥ 25 °C; Tj ≤ 175 °C

-

55

V

VDGR

drain-gate voltage

RGS =20kΩ

-55

V

VGS

gate-source voltage

-20

20

V

ID

drain current

Tmb =25°C; VGS =5V; see Figure 1 and 3

-38

A

Tmb =100 °C; VGS =5V; see Figure 1

-27

A

IDM

peak drain current

Tmb =25°C; tp ≤ 10 µs; pulsed; see Figure 3

[1]

-150

A

Ptot

total power dissipation

Tmb =25°C; see Figure 2

-88

W

Tstg

storage temperature

-55

175

°C

Tj

junction temperature

-55

175

°C

Source-drain diode

IS

source current

Tmb =25°C

-

38

A

ISM

peak source current

tp ≤ 10 µs; pulsed; Tmb =25°C

-

150

A

Avalanche ruggedness

EDS(AL)S

non-repetitive

drain-source avalanche

energy

ID =34A; Vsup ≤ 55 V; RGS =50 Ω; VGS =10V;

Tj(init) = 25 °C; unclamped

-58

mJ

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