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BUK765R2-40B Datasheet(PDF) 7 Page - NXP Semiconductors |
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BUK765R2-40B Datasheet(HTML) 7 Page - NXP Semiconductors |
7 / 13 page BUK765R2-40B_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 16 January 2009 7 of 13 NXP Semiconductors BUK765R2-40B N-channel TrenchMOS standard level FET Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values Fig 6. Drain-source on-state resistance as a function of gate-source voltage; typical values Fig 7. Sub-threshold drain current as a function of gate-source voltage Fig 8. Forward transconductance as a function of drain current; typical values 03nk19 0 100 200 300 400 02 46 8 10 VDS (V) ID (A) 8.5 8 7.5 7 6.5 6 5.5 5 4.5 20 14 9 9.5 10 12 label is VGS (V) 03nk18 3 8 13 18 5 101520 VGS (V) RDSon (m Ω) 03aa35 VGS (V) 06 4 2 10−4 10−5 10−2 10−3 10−1 ID (A) 10−6 min typ max 03nk16 0 20 40 60 80 020 40 60 80 ID (A) gfs (S) |
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