BUK9Y40-55B datasheet(5/12 Pages) NXP

Part #	BUK9Y40-55B

Description	N-channel TrenchMOS logic level FET

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Manufacturer	NXP [NXP Semiconductors]

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BUK9Y40-55B_3

Product data sheet

Rev. 03 — 22 February 2008

5 of 12

NXP Semiconductors

BUK9Y40-55B

N-channel TrenchMOS logic level FET

6.

Characteristics

Table 6.

Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

V(BR)DSS

drain-source

breakdown voltage

ID =0.25mA; VGS =0V;

Tj =25 °C

55

-

V

ID =0.25mA; VGS =0V;

Tj =-55 °C

50

-

V

VGS(th)

gate-source threshold

voltage

ID =1mA; VDS = VGS;

Tj = 175 °C; see Figure 11

0.5

-

V

ID =1mA; VDS = VGS; Tj =25 °C;

see Figure 11

1.1

1.5

2

V

ID =1mA; VDS = VGS;

Tj =-55 °C; see Figure 11

--

2.3

V

IDSS

drain leakage current

VDS =55V; VGS =0V; Tj =25 °C

-

0.02

1

μA

VDS =55V; VGS =0V;

Tj = 175 °C

--

500

μA

IGSS

gate leakage current

VDS =0V; VGS =15V; Tj =25 °C

-

2

100

nA

VDS =0V; VGS =-15 V;

Tj =25 °C

-2

100

nA

RDSon

drain-source on-state

resistance

VGS =5V; ID =15A; Tj = 175 °C;

see Figure 12 and 13

--

84

m

Ω

VGS =10V; ID =15A; Tj =25 °C-

32

36

m

Ω

VGS =4.5 V; ID =15A; Tj =25 °C-

-

45

m

Ω

VGS =5V; ID =15A; Tj =25 °C;

see Figure 12 and 13

-34

40

m

Ω

Source-drain diode

VSD

source-drain voltage

IS =20A; VGS =0V; Tj =25 °C;

see Figure 16

-0.85

1.2

V

trr

reverse recovery time

IS =20A; dIS/dt = -100 A/μs;

VGS =-10 V; VDS =30 V;

Tj =25 °C

-45

-

ns

Qr

recovered charge

-

25

-

nC

Dynamic characteristics

QG(tot)

total gate charge

ID =15A; VDS =44V; VGS =5V;

Tj =25 °C; see Figure 14

-11

-

nC

QGS

gate-source charge

-

2

-

nC

QGD

gate-drain charge

-

5

-

nC

Ciss

input capacitance

VGS =0V; VDS =25V;

f=1MHz; Tj =25 °C;

see Figure 15

-

765

1020

pF

Coss

output capacitance

-

123

148

pF

Crss

reverse transfer

capacitance

-71

97

pF

td(on)

turn-on delay time

VDS =30V; RL =2.2 Ω;

VGS =5V; RG(ext) =10 Ω;

Tj =25 °C

-17

-

ns

tr

rise time

-

93

-

ns

td(off)

turn-off delay time

-

35

-

ns

tf

fall time

-

72

-

ns

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