BUK9Y09-40B datasheet(6/14 Pages) NXP

Part #	BUK9Y09-40B

Description	N-channel TrenchMOS logic level FET

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BUK9Y09-40B

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Product data sheet

Rev. 04 — 7 April 2010

6 of 14

NXP Semiconductors

BUK9Y09-40B

N-channel TrenchMOS logic level FET

6.

Characteristics

Table 6.

Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

V(BR)DSS

drain-source

breakdown voltage

ID =0.25mA; VGS =0V; Tj = -55 °C

36

-

V

ID =0.25mA; VGS =0V; Tj = 25 °C

40

--V

VGS(th)

gate-source threshold

voltage

ID =1mA; VDS =VGS; Tj =25°C;

see Figure 9; see Figure 10

1.25

1.65

2.15

V

VGSth

gate-source threshold

voltage

ID =1mA; VDS =VGS; Tj = 175 °C;

see Figure 9; see Figure 10

0.5

--V

ID =1mA; VDS =VGS; Tj =-55 °C;

see Figure 9; see Figure 10

--2.45

V

IDSS

drain leakage current

VDS =40V; VGS =0V; Tj = 25 °C

-

0.02

1

µA

VDS =40V; VGS =0V; Tj = 175 °C

-

500

µA

IGSS

gate leakage current

VDS =0V; VGS =15V; Tj = 25 °C

-

2

100

nA

VDS =0V; VGS =-15 V; Tj = 25 °C

-

2

100

nA

RDSon

drain-source on-state

resistance

VGS =5V; ID =25A; Tj =25 °C;

see Figure 11; see Figure 12

-6.9

9

m

Ω

VGS =4.5 V; ID =25A; Tj = 25 °C

--10

m

Ω

VGS =5V; ID =25A; Tj = 175 °C;

see Figure 12

--19

m

Ω

VGS =10V; ID =25A; Tj =25°C

-

5.8

8

m

Ω

Dynamic characteristics

QG(tot)

total gate charge

ID =25A; VDS =32V; VGS =5V;

see Figure 13

-30

-

nC

QGS

gate-source charge

-

6.5

-

nC

QGD

gate-drain charge

-

11

-

nC

Ciss

input capacitance

VGS =0V; VDS =25V; f=1MHz;

Tj =25°C; see Figure 14

-

2150

2866

pF

Coss

output capacitance

-

378

454

pF

Crss

reverse transfer

capacitance

-

194

266

pF

td(on)

turn-on delay time

VDS =30V; RL =1.2 Ω; VGS =5V;

RG(ext) =10 Ω

-29

-

ns

tr

rise time

-

92

-

ns

td(off)

turn-off delay time

-

97

-

ns

tf

fall time

-

83

-

ns

Source-drain diode

VSD

source-drain voltage

IS =25A; VGS =0V; Tj =25°C;

see Figure 15

-

0.85

1.2

V

trr

reverse recovery time

IS =20A; dIS/dt = -100 A/µs; VGS =0V;

VDS =30V

-40

-

ns

Qr

recovered charge

-

66

-

nC

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