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BUK7E2R3-40C Datasheet(PDF) 9 Page - NXP Semiconductors |
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BUK7E2R3-40C Datasheet(HTML) 9 Page - NXP Semiconductors |
9 / 14 page BUK7E2R3-40C_3 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 03 — 26 January 2009 9 of 14 NXP Semiconductors BUK7E2R3-40C N-channel TrenchMOS standard level FET Fig 10. Gate-source threshold voltage as a function of junction temperature Fig 11. Sub-threshold drain current as a function of gate-source voltage Fig 12. Drain-source on-state resistance as a function of gate-source voltage; typical values Fig 13. Normalized drain-source on-state resistance factor as a function of junction temperature Tj (°C) −60 180 120 060 03aa32 2 3 1 4 5 VGS(th) (V) 0 max typ min 03aa35 VGS (V) 06 4 2 10−4 10−5 10−2 10−3 10−1 ID (A) 10−6 min typ max 003aab006 1 2 3 4 510 15 20 VGS (V) RDSon (m Ω) 03aa27 0 0.5 1 1.5 2 -60 0 60 120 180 Tj ( °C) a |
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