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BTA201W Datasheet(PDF) 7 Page - NXP Semiconductors |
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BTA201W Datasheet(HTML) 7 Page - NXP Semiconductors |
7 / 13 page BTA201W_SER_3 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 03 — 13 March 2008 7 of 13 NXP Semiconductors BTA201W series E 1 A Three-quadrant triacs high commutation 7. Dynamic characteristics Table 6. Dynamic characteristics Symbol Parameter Conditions Min Typ Max Unit BTA201W-600E and BTA201W-800E dVD/dt rate of rise of off-state voltage VDM = 0.67VDRM(max); Tj = 125 °C; exponential waveform; gate open circuit 600 - - V/ µs dIcom/dt rate of change of commutating current VDM = 400 V; Tj = 125 °C; IT(RMS) =4A; gate open circuit dVcom/dt =20V/µs 2.5 - - A/ms dVcom/dt =10V/µs 3.5 - - A/ms tgt gate-controlled turn-on time ITM = 20 A; VD =VDRM(max); IG = 0.1 A; dIG/dt = 5 A/µs -2 - µs (1) T2 − G− (2) T2+ G − (3) T2+ G+ Fig 7. Normalized gate trigger voltage as a function of junction temperature Fig 8. Normalized gate trigger current as a function of junction temperature Tj (°C) −50 150 100 050 001aab101 0.8 1.2 1.6 0.4 VGT VGT(25°C) IGT IGT(25°C) Tj (°C) −50 0 150 100 50 1 2 3 0 003aaa959 (1) (2) (3) (1) (2) (3) |
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