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BT138-600D Datasheet(PDF) 6 Page - NXP Semiconductors |
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BT138-600D Datasheet(HTML) 6 Page - NXP Semiconductors |
6 / 12 page BT138_SER _D_E_2 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 02 — 12 March 2008 6 of 12 NXP Semiconductors BT138 series D and E 12 A four-quadrant triacs, sensitive gate 6. Static characteristics Table 5. Static characteristics Tj =25 °C unless otherwise specified. Symbol Parameter Conditions BT138-600D BT138-600E BT138-800E Unit Min Typ Max Min Typ Max IGT gate trigger current VD =12V; IT = 0.1 A; see Figure 8 T2+ G+ - 1.3 5 - 2.5 10 mA T2+ G − - 2.8 5 - 4.0 10 mA T2 − G− - 3.2 5 - 5.0 10 mA T2 − G+ - 5.5 10 - 11 25 mA IL latching current VD =12V; IG = 0.1 A; see Figure 10 T2+ G+ - - 15 - - 30 mA T2+ G − --20 --40 mA T2 − G− --15 --30 mA T2 − G+ --20 --40 mA IH holding current VD =12V; IG = 0.1 A; see Figure 11 --10 --30 mA VT on-state voltage IT = 15 A; see Figure 9 - 1.4 1.65 - 1.4 1.65 V VGT gate trigger voltage IT = 0.1 A; see Figure 7 VD = 12 V; - 0.7 1.5 - 0.7 1.5 V VD =VDRM; Tj = 125 °C 0.25 0.4 - 0.25 0.4 - V ID off-state current VD =VDRM(max); Tj = 125 °C - 0.1 0.5 - 0.1 0.5 mA |
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