BSP19 datasheet(3/6 Pages) NXP

Part #	BSP19

Description	NPN high-voltage transistors

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Manufacturer	NXP [NXP Semiconductors]

Direct Link	http://www.nxp.com

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3 / 6 page

1999 Jun 01

3

NXP Semiconductors

Product data sheet

NPN high-voltage transistors

BSP19; BSP20

THERMAL CHARACTERISTICS

Note

1.

Device mounted on printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2.

For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated

Handbook”.

CHARACTERISTICS

Tj = 25 °C unless otherwise specified.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

note 1

104

K/W

Rth j-s

thermal resistance from junction to soldering point

23

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCE = 300 V

−

20

nA

IEBO

emitter cut-off current

IC = 0; VEB = 5 V

−

100

nA

hFE

DC current gain

VCE = 10 V; IC = 20 mA

40

−

VCEsat

collector-emitter saturation voltage

IC = 50 mA; IB = 4 mA

−

0.5

V

Cc

collector capacitance

IE = ie = 0; VCB = 10 V; f = 1 MHz

−

2.5

pF

fT

transition frequency

VCE = 10 V; IC = 10 mA; f = 100 MHz 70

−

MHz

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