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ZRB500N802 Datasheet(PDF) 2 Page - Zetex Semiconductors |
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ZRB500N802 Datasheet(HTML) 2 Page - Zetex Semiconductors |
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2 / 5 page  ABSOLUTE MAXIMUM RATING Reverse Current 25mA Forward Current 25mA Operating Temperature -40 to 85°C Storage Temperature -55 to 125°C Power Dissipation (Tamb=25°C) SOT23 330mW E-Line, 3 pin (TO92) 500mW E-Line, 2 pin (TO92) 500mW SO8 625mW ELECTRICAL CHARACTERISTICS TEST CONDITIONS (Unless otherwise stated) Tamb=25°C SYMBOL PARAMETER CONDITIONS LIMITS TOL. % UNITS MIN TYP MAX VR Reverse Breakdown Voltage IR=150µA 4.95 4.90 4.85 5.0 5.0 5.0 5.05 5.10 5.15 1 2 3 V IMIN Minimum Operating Current 30 50 µA IR Recommended Operating Current 0.05 15 mA TC Average Reverse Breakdown Voltage Temp. Co. IR(min) to IR(max) 15 50 ppm/°C RS § Slope Resistance 0.33 1.5 Ω ZR Reverse Dynamic Impedance IR =1mA f = 100Hz IAC= 0.1 IR 0.4 1 Ω EN Wideband Noise Voltage IR= 150µA f = 10Hz to 10kHZ 100 µV(rms) TC = VR Change x 1000000 VR x Temperature Change § RS = V R Change(IR (min) to IR (max)) IR ( max) − IR (min) ZRB500 ZRB500 TYPICAL CHARACTERISTICS Temperature (°C) Reference Current (mA) Frequency (kHz) Temperature Drift Slope Resistance v Current Time (µs) 0500 -40 100 0.1 Slope Resistance v Frequency -20 0 20 40 60 80 Forward Characteristics Forward Current (mA) 0.1 1 10 100 1000 IR=150µAto15mA 1 0.1 10 100 1000 10 100 1 0.1 0.01 1000 0 1 2 3 4 Time (µs) I4=150µA I4=5mA 0.4 0.6 0.8 1.0 1.2 1.4 1.6 TA=25°C TA=-40°C TA=85°C 0 10 0 4.0 6.0 4.96 5.02 5.00 4.98 0 2.0 3.0 1.0 110 2.0 0 10 0 4.0 6.0 2.0 Transient Response (Single Pulse) Transient Response (Repetitive Pulse) VIN VR 33K 150µA 5mA 150 µA 1K 5mA 33K 150µA 1K 5mA IN R IN R VIN VR Reverse Characteristics Reverse Voltage (V) 0 60 6.0 2.0 4.0 0 10 20 30 40 50 T)=-40°C T)=85°C 1 - 38 1 - 37 |
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