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BLF6G22LS-75 Datasheet(PDF) 4 Page - NXP Semiconductors |
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BLF6G22LS-75 Datasheet(HTML) 4 Page - NXP Semiconductors |
4 / 11 page BLF6G22LS-75_2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 — 14 April 2010 4 of 11 NXP Semiconductors BLF6G22LS-75 Power LDMOS transistor VDS =28V; IDq = 690 mA; f = 2140 MHz. Fig 1. One-tone CW power gain and drain efficiency as functions of load power; typical values PL (W) 0 100 80 40 60 20 001aah586 18 17 19 20 Gp (dB) 16 40 25 55 70 ηD (%) 10 Gp ηD VDS =28V; IDq = 690 mA; f1 = 2140 MHz; f2 = 2140.1 MHz. VDS =28V; IDq = 690 mA; f1 = 2140 MHz; f2 = 2140.1 MHz. Fig 2. Two-tone CW power gain and drain efficiency as functions of peak envelope load power; typical values Fig 3. Two-tone CW intermodulation distortion as a function of peak envelope load power; typical values PL(PEP) (W) 0 140 120 40 80 20 60 100 001aah567 18 17 19 20 Gp (dB) 16 30 15 45 60 ηD (%) 0 Gp ηD PL(PEP) (W) 0 140 120 40 80 20 60 100 001aah568 −45 −60 −30 −15 IMD (dBc) −75 IMD3 IMD5 IMD7 |
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