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PTH08T220WAZT Datasheet(PDF) 4 Page - Texas Instruments |
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PTH08T220WAZT Datasheet(HTML) 4 Page - Texas Instruments |
4 / 38 page ELECTRICAL CHARACTERISTICS PTH08T220W, PTH08T221W SLTS252K – NOVEMBER 2005 – REVISED JUNE 2009................................................................................................................................................... www.ti.com PTH08T220W TA = 25°C, VI = 5 V, VO = 3.3 V, CI = 330 µF, CI2 = 22 µF, CO = 220 µF, and IO = IO max (unless otherwise stated) PARAMETER TEST CONDITIONS PTH08T220W UNIT MIN TYP MAX IO Output current Over VO range 25°C, natural convection 0 16 A 0.69 ≤ VO ≤ 1.2 4.5 14 (1) VI Input voltage range Over IO range 1.2 < VO ≤ 3.6 4.5 14 V 3.6 < VO ≤ 5.5 VO + 2 14 VOADJ Output voltage adjust range Over IO range 0.69 5.5 V Set-point voltage tolerance ±0.5 ±1 (2) %Vo Temperature variation –40°C < TA < 85°C ±0.3 %Vo VO Line regulaltion Over VI range ±3 mV Load regulation Over IO range ±2 mV Total output variation Includes set-point, line, load, –40°C ≤ TA ≤ 85°C ±1.5 (2) %Vo RSET = 171 Ω, VI = 8 V, VO = 5.0 V 95% RSET = 1.21 kΩ, VO = 3.3 V 94% RSET = 2.38 kΩ, VO = 2.5 V 91% η Efficiency IO = 16 A RSET = 4.78 kΩ, VO = 1.8 V 88% RSET = 7.09 kΩ, VO = 1.5 V 87% RSET = 12.1 kΩ, VO = 1.2 V (1) 84% RSET = 20.8 kΩ, VO = 1.0 V (1) 82% VO Ripple (peak-to-peak) 20-MHz bandwidth 15 (1) mVPP ILIM Overcurrent threshold Reset, followed by auto-recovery 32 A ttr Recovery time 70 µs w/o TurboTrans CO= 220 µF, TypeC ΔVtr 2.5 A/µs load step VO over/undershoot 150 mV Transient response 50 to 100% IOmax ttrTT w/ TurboTrans Recovery time 130 µs VO = 2.5 V CO= 2000 µF, TypeC mV ΔVtrTT VO over/undershoot 30 RTT = short IIL Track input current (pin 10) Pin to GND –130(3) µA dVtrack/dt Track slew rate capability CO ≤ CO (max) 1 V/ms VI increasing, RUVLO = OPEN 4.3 4.45 Adjustable Under-voltage lockout UVLOADJ VI decreasing, RUVLO = OPEN 3.7 4.2 V (pin 11) Hysteresis, RUVLO ≤ 52.3 kΩ 0.5 Input high voltage (VIH) Open(4) V Inhibit control (pin 11) Input low voltage (VIL) -0.2 0.8 Input low current (IIL ), Pin 11 to GND -235 µA Iin Input standby current Inhibit (pin 11) to GND, Track (pin 10) open 5 mA f s Switching frequency Over VI and IO ranges, SmartSync (pin 1) to GND 300 kHz Synchronization (SYNC) fSYNC 240 400 kHz frequency VSYNCH SYNC High-Level Input Voltage 2 5.5 V VSYNCL SYNC Low-Level Input Voltage 0.8 V tSYNC SYNC Minimum Pulse Width 200 nSec Nonceramic 330 (5) CI External input capacitance µF Ceramic 22 (5) (1) For output voltages ≤ 1.2 V, at nominal operating frequency, the output ripple may increase (typically 2×) when operating at input voltages greater than (VO × 11). When using the SmartSync feature to adjust the switching frequency, see the SmartSync Considerations section of the datasheet for further guidance. (2) The set-point voltage tolerance is affected by the tolerance and stability of RSET. The stated limit is unconditionally met if RSET has a tolerance of 1% with 100 ppm/C or better temperature stability. (3) A low-leakage (<100 nA), open-drain device, such as MOSFET or voltage supervisor IC, is recommended to control pin 10. The open-circuit voltage is less than 8 Vdc. (4) Do not place an external pull-up on this pin. If it is left open-circuit, the module operates when input power is applied. A small, low-leakage (<100 nA) MOSFET is recommended for control. For additional information, see the related application section. (5) A 330 µF electrolytic and a 22 µF ceramic input capacitor is required for proper operation. The electrolytic capacitor must be rated for a minimum of 700 mA rms of ripple current. 4 Submit Documentation Feedback Copyright © 2005–2009, Texas Instruments Incorporated Product Folder Link(s): PTH08T220W PTH08T221W |
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