BLF6G10-160RN datasheet(3/11 Pages) NXP

Part #	BLF6G10-160RN

Description	Power LDMOS transistor

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Manufacturer	NXP [NXP Semiconductors]

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BLF6G10-160RN_10LS-160RN_2

Product data sheet

Rev. 02 — 21 January 2010

3 of 11

NXP Semiconductors

BLF6G10(LS)-160RN

Power LDMOS transistor

5.

Thermal characteristics

6.

Characteristics

7.

Application information

7.1 Ruggedness in class-AB operation

The BLF6G10-160RN and BLF6G10LS-160RN are capable of withstanding a load

mismatch corresponding to VSWR = 10 : 1 through all phases under the following

conditions: VDS =32 V; IDq = 1200 mA; PL = 160 W (CW); f = 960 MHz.

Table 5.

Thermal characteristics

Symbol

Parameter

Conditions

Type

Typ

Unit

Rth(j-case)

thermal resistance from

junction to case

Tcase =80 °C;

PL =32W

BLF6G10-160RN

0.5

K/W

BLF6G10LS-160RN

0.44

K/W

Table 6.

Characteristics

Tj = 25 °C unless otherwise specified

Symbol Parameter

Conditions

Min

Typ

Max

Unit

V(BR)DSS drain-source breakdown

voltage

VGS =0V; ID = 0.72 mA

65

--V

VGS(th)

gate-source threshold voltage

VDS =10 V; ID = 216 mA

1.4

1.9

2.4

V

VGSq

gate-source quiescent voltage

VDS =32V;

ID = 1300 mA

1.7

2.2

2.7

V

IDSS

drain leakage current

VGS =0V; VDS = 32 V

--5

μA

IDSX

drain cut-off current

VGS =VGS(th) +3.75 V;

VDS =10V

30.6

39

-

A

IGSS

gate leakage current

VGS =13V; VDS = 0 V

-

450

nA

gfs

forward transconductance

VDS =10V; ID =7.5 A

-

13.5

-

S

RDS(on)

drain-source on-state

resistance

VGS =VGS(th) + 3.75 V;

ID =7.5 A

-0.07

-

Ω

Crs

feedback capacitance

VGS =0V; VDS =32V;

f= 1MHz

-4.2

-pF

Table 7.

Application information

Mode of operation: 2-carrier W-CDMA; PAR 7.5 dB at 0.01 % probability on CCDF; 3GPP test

model 1; 1-64 PDPCH; f1 = 922.5 MHz; f2 = 927.5 MHz; f3 = 952.5 MHz; f4 = 957.5 MHz;

RF performance at VDS =32V; IDq = 1200 mA; Tcase =25 °C; unless otherwise specified; in a

class-AB production test circuit.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

PL(AV)

average output power

-

32

-

W

Gp

power gain

PL(AV) = 32 W

21

22.5

-

dB

RLin

input return loss

PL(AV) =32 W

-

−8

−5.5

dB

η

D

drain efficiency

PL(AV) =32 W

25

27

-

%

ACPR

adjacent channel power ratio

PL(AV) =32 W

-

−41

−38

dBc

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