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BLF6G10-160RN Datasheet(PDF) 3 Page - NXP Semiconductors |
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BLF6G10-160RN Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 11 page BLF6G10-160RN_10LS-160RN_2 © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 — 21 January 2010 3 of 11 NXP Semiconductors BLF6G10(LS)-160RN Power LDMOS transistor 5. Thermal characteristics 6. Characteristics 7. Application information 7.1 Ruggedness in class-AB operation The BLF6G10-160RN and BLF6G10LS-160RN are capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS =32 V; IDq = 1200 mA; PL = 160 W (CW); f = 960 MHz. Table 5. Thermal characteristics Symbol Parameter Conditions Type Typ Unit Rth(j-case) thermal resistance from junction to case Tcase =80 °C; PL =32W BLF6G10-160RN 0.5 K/W BLF6G10LS-160RN 0.44 K/W Table 6. Characteristics Tj = 25 °C unless otherwise specified Symbol Parameter Conditions Min Typ Max Unit V(BR)DSS drain-source breakdown voltage VGS =0V; ID = 0.72 mA 65 --V VGS(th) gate-source threshold voltage VDS =10 V; ID = 216 mA 1.4 1.9 2.4 V VGSq gate-source quiescent voltage VDS =32V; ID = 1300 mA 1.7 2.2 2.7 V IDSS drain leakage current VGS =0V; VDS = 32 V --5 μA IDSX drain cut-off current VGS =VGS(th) +3.75 V; VDS =10V 30.6 39 - A IGSS gate leakage current VGS =13V; VDS = 0 V - - 450 nA gfs forward transconductance VDS =10V; ID =7.5 A - 13.5 - S RDS(on) drain-source on-state resistance VGS =VGS(th) + 3.75 V; ID =7.5 A -0.07 - Ω Crs feedback capacitance VGS =0V; VDS =32V; f= 1MHz -4.2 -pF Table 7. Application information Mode of operation: 2-carrier W-CDMA; PAR 7.5 dB at 0.01 % probability on CCDF; 3GPP test model 1; 1-64 PDPCH; f1 = 922.5 MHz; f2 = 927.5 MHz; f3 = 952.5 MHz; f4 = 957.5 MHz; RF performance at VDS =32V; IDq = 1200 mA; Tcase =25 °C; unless otherwise specified; in a class-AB production test circuit. Symbol Parameter Conditions Min Typ Max Unit PL(AV) average output power - 32 - W Gp power gain PL(AV) = 32 W 21 22.5 - dB RLin input return loss PL(AV) =32 W - −8 −5.5 dB η D drain efficiency PL(AV) =32 W 25 27 - % ACPR adjacent channel power ratio PL(AV) =32 W - −41 −38 dBc |
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