BLF4G22-130 datasheet(1/13 Pages) NXP

Part #	BLF4G22-130

Description	UHF power LDMOS transistor

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Manufacturer	NXP [NXP Semiconductors]

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1.

Product proﬁle

1.1 General description

130 W LDMOS power transistor for base station applications at frequencies from

2000 MHz to 2200 MHz.

[1]

10 MHz carrier spacing PAR 7 dB at 0.01 % probability on CCDF, 3GPP test model 1, 1 - 64 DPCH.

1.2 Features

I Typical 2-carrier W-CDMA performance at a supply voltage of 28 V and an IDq of

1150 mA:

N Average output power = 33 W

N Power gain = 13.8 dB

N Efﬁciency = 26 %

N ACPR = −41 dBc

N IMD3 = −37 dBc

I Easy power control

I Integrated ESD protection

I Excellent ruggedness (> 10 : 1 VSWR at 130 W (CW))

I High efﬁciency

I High peak power capability (> 190 W)

I Excellent thermal stability

I Designed for broadband operation (2000 MHz to 2200 MHz)

I Internally matched for ease of use

BLF4G22-130; BLF4G22LS-130

UHF power LDMOS transistor

Rev. 01 — 3 July 2007

Product data sheet

Table 1.

Typical performance

Tcase = 25 °C in a common source class-AB test circuit.

Mode of operation

f

VDS

PL(AV)

Gp

η

D

IMD3

ACPR

(MHz)

(V)

(W)

(dB)

(%)

(dBc)

2-carrier W-CDMA[1]

f1 = 2135;

f2 = 2145

28

33

13.5

26

−37

−41

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken

during transport and handling.

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