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BLF3G22-30 Datasheet(PDF) 2 Page - NXP Semiconductors |
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BLF3G22-30 Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 13 page BLF3G22-30_1 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 01 — 21 June 2007 2 of 13 NXP Semiconductors BLF3G22-30 UHF power LDMOS transistor 1.3 Applications I RF power amplifiers for W-CDMA base stations and multicarrier applications in the 2000 MHz to 2200 MHz frequency range I Broadcast drivers 2. Pinning information [1] Connected to flange 3. Ordering information 4. Limiting values Table 2. Pinning Pin Description Simplified outline Symbol 1 drain 2 gate 3 source [1] 1 2 3 sym112 1 3 2 Table 3. Ordering information Type number Package Name Description Version BLF3G22-30 - flanged ceramic package; 2 mounting holes; 2 leads SOT608A Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage - 65 V VGS gate-source voltage - ±15 V ID drain current - 12 A Tstg storage temperature −65 +150 °C Tj junction temperature - 200 °C |
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Similar Description - BLF3G22-30 |
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