BLF3G22-30_1

© NXP B.V. 2007. All rights reserved.

Product data sheet

Rev. 01 — 21 June 2007

2 of 13

NXP Semiconductors

BLF3G22-30

UHF power LDMOS transistor

1.3 Applications

2000 MHz to 2200 MHz frequency range

2.

Pinning information

[1]

Connected to flange

3.

Ordering information

4.

Limiting values

Table 2.

Pinning

Pin

Description

Simplified outline

Symbol

1

drain

2

gate

3

source

[1]

1

2

3

sym112

1

3

2

Table 3.

Ordering information

Type number

Package

Name

Description

Version

BLF3G22-30

-

flanged ceramic package; 2 mounting holes; 2 leads

SOT608A

Table 4.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

drain-source voltage

-

65

V

gate-source voltage

-

±15

V

drain current

-

12

A

storage temperature

−65

+150

°C

junction temperature

-

200

°C