BLD6G22LS-50 datasheet(8/16 Pages) NXP

Part #	BLD6G22LS-50

Description	W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor

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Manufacturer	NXP [NXP Semiconductors]

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BLD6G22L-50_BLD6G22LS-50_2

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Objective data sheet

Rev. 02 — 18 March 2010

8 of 16

NXP Semiconductors

BLD6G22L-50; BLD6G22LS-50

W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor

8.3.2 W-CDMA

VDS =28V; IDq = 170 mA (main); Tcase =25 °C;

f = 2140 MHz; 2-carrier W-CDMA; PAR = 8.3 dB at

0.01 % probability on CCDF.

(1) VGS(amp)peak = 0 V

(2) VGS(amp)peak = 0.2 V

(3) VGS(amp)peak = 0.4 V

(4) VGS(amp)peak = 0.5 V

(5) VGS(amp)peak = 0.6 V

(6) VGS(amp)peak = 0.8 V

VDS =28V; IDq = 170 mA (main); Tcase =25 °C;

f = 2140 MHz; 2-carrier W-CDMA; PAR = 8.3 dB at

0.01 % probability on CCDF.

(1) VGS(amp)peak = 0 V

(2) VGS(amp)peak = 0.2 V

(3) VGS(amp)peak = 0.4 V

(4) VGS(amp)peak = 0.5 V

(5) VGS(amp)peak = 0.6 V

(6) VGS(amp)peak = 0.8 V

Fig 8.

Power gain as a function of average load

power; typical values

Fig 9.

Drain efficiency as a function of average load

power; typical values

PL(AV) (dBm)

20

44

36

28

001aal149

11

13

15

Gp

(dB)

9

(6)

(5)

(4)

(3)

(2)

(1)

001aal150

PL(AV) (dBm)

20

44

36

28

20

30

10

40

50

ηD

(%)

0

(1)

(2)

(3)

(4)

(5)

(6)

VDS =28V; IDq = 170 mA (main); Tcase =25 °C; f = 2140 MHz; 2-carrier W-CDMA; PAR = 8.3 dB

at 0.01 % probability on CCDF.

Fig 10. Power gain and drain efficiency as function of load power; typical values

VGS(amp)peak (V)

0

1.0

0.8

0.4

0.6

0.2

001aal151

14.2

13.6

14.8

15.4

Gp

(dB)

13.0

20

10

30

40

ηD

(%)

0

ηD

Gp

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