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BLA1011S-200R Datasheet(PDF) 5 Page - NXP Semiconductors |
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BLA1011S-200R Datasheet(HTML) 5 Page - NXP Semiconductors |
5 / 13 page BLA1011-200R_1011S-200R_1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 01 — 23 February 2010 5 of 13 NXP Semiconductors BLA1011-200R; BLA1011S-200R Avionics LDMOS transistors VDS = 36 V; IDq = 150 mA; PL = 200 W; tp =50 μs; δ =2% VDS = 36 V; IDq = 150 mA; PL = 200 W; tp =50 μs; δ =2% Fig 5. Power gain and drain efficiency a functions of frequency; typical values Fig 6. Input Impedance as a function of frequency (series components); typical values VDS = 36 V; IDq = 150 mA; PL = 200 W; tp =50 μs; δ =2% Fig 7. Load impedance as a function of frequency (series components); typical values 1020 20 Gp (dB) Gp ηD (%) ηD 10 15 5 0 80 40 60 20 0 1040 1100 f (MHz) mgw037 1060 1080 1020 5 Zi (W) ri xi 3 4 2 0 1 1040 1100 f (MHz) mgw038 1060 1080 1020 4 ZL (W) RL XL 0 2 −2 −4 1040 1100 f (MHz) mgw039 1060 1080 |
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