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BF1108R Datasheet(PDF) 1 Page - NXP Semiconductors |
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BF1108R Datasheet(HTML) 1 Page - NXP Semiconductors |
1 / 10 page 1. Product profile 1.1 General description These switches are a combination of a depletion type Field-Effect Transistor (FET) and a band-switching diode in an SOT143B (BF1108) or SOT143R (BF1108R) package. The low loss and high isolation capabilities of these devices provide excellent RF switching functions. The gate of the MOSFET can be isolated from ground with the diode, resulting in low losses. Integrated diodes between gate and source and between gate and drain protect against excessive input voltage surges. 1.2 Features I Specially designed for low loss RF switching up to 1 GHz 1.3 Applications I Various RF switching applications such as: N Passive loop through for VCR tuner N Transceiver switching 1.4 Quick reference data [1] IF = diode forward current. BF1108; BF1108R Silicon RF switches Rev. 04 — 29 May 2008 Product data sheet CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Lins(on) on-state insertion loss RS =RL =50 Ω;f ≤ 1 GHz; VSK =VDK =0V; IF =0mA [1] -- 2 dB ISLoff off-state isolation RS =RL =50 Ω; f ≤ 1 GHz; VSK =VDK =5V; IF =1mA 30 --dB RDSon drain-source on-state resistance VKS =0V; ID = 1 mA - 12 20 Ω VGS(p) gate-source pinch-off voltage VDS =1V; ID =20 µA- −3 −4V |
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Similar Description - BF1108R |
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