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BCW61 Datasheet(PDF) 3 Page - NXP Semiconductors |
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BCW61 Datasheet(HTML) 3 Page - NXP Semiconductors |
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3 / 6 page  1999 Apr 12 3 NXP Semiconductors Product data sheet PNP general purpose transistors BCW61 series THERMAL CHARACTERISTICS Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. Note 1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02. SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient note 1 500 K/W SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICBO collector cut-off current IE = 0; VCB = −32 V − − −20 nA IE = 0; VCB = −32 V; Tamb = 150 °C − − −20 μA IEBO emitter cut-off current IC = 0; VEB = −4 V − − −20 nA hFE DC current gain IC = −10 μA; VCE = −5 V BCW61B 30 − − BCW61C 40 − − BCW61D 100 − − DC current gain IC = −2 mA; VCE = −5 V BCW61B 180 − 310 BCW61C 250 − 460 BCW61D 380 − 630 DC current gain IC = −50 mA; VCE = −1 V BCW61B 80 − − BCW61C 100 − − BCW61D 110 − − VCEsat collector-emitter saturation voltage IC = −10 mA; IB = −0.25 mA −60 − −250 mV IC = −50 mA; IB = −1.25 mA −120 − −550 mV VBEsat base-emitter saturation voltage IC = −10 mA; IB = −0.25 mA −600 − −850 mV IC = −50 mA; IB = −1.25 mA −0.68 − −1.05 V VBE base-emitter voltage IC = −2 mA; VCE = −5 V −600 −650 −750 mV IC = −10 μA; VCE = −5 V − −550 − mV IC = −50 mA; VCE = −1 V − −720 − mV Cc collector capacitance IE = ie = 0; VCB = −10 V; f = 1 MHz − 4.5 − pF Ce emitter capacitance IC = ic = 0; VEB = −0.5 V; f = 1 MHz − 11 − pF fT transition frequency IC = −10 mA; VCE = −5 V; f = 100 MHz; note 1 100 − − MHz F noise figure IC = −200 μA; VCE = −5 V; RS = 2 kΩ; f = 1 kHz; B = 200 Hz − 2 6 dB |
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Similar Description - BCW61 |
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