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BCW60C Datasheet(PDF) 2 Page - NXP Semiconductors |
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BCW60C Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 6 page 1999 Apr 22 2 NXP Semiconductors Product data sheet NPN general purpose transistors BCW60 series FEATURES • Low current (max. 100 mA) • Low voltage (max. 32 V). APPLICATIONS • General purpose switching and amplification. DESCRIPTION NPN transistor in a SOT23 plastic package. PNP complements: BCW61 series. MARKING Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. PINNING TYPE NUMBER MARKING CODE(1) BCW60B AB ∗ BCW60C AC ∗ BCW60D AD ∗ PIN DESCRIPTION 1 base 2 emitter 3 collector Fig.1 Simplified outline (SOT23) and symbol. handbook, halfpage 2 1 3 MAM255 Top view 2 3 1 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 32 V VCEO collector-emitter voltage open base − 32 V VEBO emitter-base voltage open collector − 5 V IC collector current (DC) − 100 mA ICM peak collector current − 200 mA IBM peak base current − 200 mA Ptot total power dissipation Tamb ≤ 25 °C − 250 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C |
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Similar Description - BCW60C |
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