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REV. A

10.Output pins

It is necessary to place capacitors between each output pin and GND to prevent oscillation on the output.

Usable capacitance

values range from 1μF to 1000μF.

Ceramic capacitors can be used as long as their ESR value is low enough to prevent

oscillation (0.001

Ω to 20Ω).

Abrupt fluctuations in input voltage and load conditions may affect the output voltage.

Output

capacitance values should be determined only through sufficient testing of the actual application.

11.Over current protection circuit (OCP)

The IC incorporates an integrated over-current protection circuit that operates in accordance with the rated output capacity.

This

circuit serves to protect the IC from damage when the load becomes shorted. It is also designed to limit output current (without

latching) in the event of a large and instantaneous current flow from a large capacitor or other component. These protection circuits

are effective in preventing damage due to sudden and unexpected accidents. However, the IC should not be used in applications

characterized by the continuous or transitive operation of the protection circuits.

12.Thermal shutdown circuit (TSD)

The IC incorporates a built-in thermal shutdown circuit, which is designed to turn the IC off completely in the event of thermal

overload. It is not designed to protect the IC from damage or guarantee its operation. ICs should not be used after this function has

activated, or in applications where the operation of this circuit is assumed.

13.Applications or inspection processes where the potential of the Vcc pin or other pins may be reversed from their normal state may

cause damage to the IC's internal circuitry or elements. Use an output pin capacitance of 1000μF or lower in case Vcc is shorted

with the GND pin while the external capacitor is charged. Insert a diode in series with Vcc to prevent reverse current flow, or insert

bypass diodes between Vcc and each pin.

14.Positive voltage surges on VCC pin

A power zener diode should be inserted between VCC and GND for protection against voltage surges of more than 35V on the VCC

pin.

15.Negative voltage surges on VCC pin

A schottky barrier diode should be inserted between VCC and GND for protection against voltages lower than GND on the VCC pin.

16. Output protection diode

Loads with large inductance components may cause reverse current flow during startup or shutdown.

In such cases, a protection

diode should be inserted on the output to protect the IC.

17.Regarding input pins of the IC

This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them isolated.

PN

junctions are formed at the intersection of these P layers with the N layers of other elements, creating parasitic diodes and/or

transistors. For example (refer to the figure below):

●When GND > Pin A and GND > Pin B, the PN junction operates as a parasitic diode

●When GND > Pin B, the PN junction operates as a parasitic transistor

Parasitic diodes occur inevitably in the structure of the IC, and the operation of these parasitic diodes can result in mutual interference

among circuits, operational faults, or physical damage. Accordingly, conditions that cause these diodes to operate, such as applying a

voltage lower than the GND voltage to an input pin (and thus to the P substrate) should be avoided.

Example of Simple Monolithic IC Architecture

Parasitic elements

(Pin A)

Parasitic elements

or transistors

(Pin B)

C

B

E

N

P

N

N

P+

P+

Parasitic elements

or transistors

P substrate

(Pin B)

C

B

E

Transistor (NPN)

(Pin A)

N

P

N

N

P+

P+

Resistor

Parasitic elements

P

GND

GND

GND

N