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BCM856BS Datasheet(PDF) 3 Page - NXP Semiconductors |
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BCM856BS Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 14 page BCM856BS_BCM856DS_1 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 7 August 2008 3 of 14 NXP Semiconductors BCM856BS; BCM856DS PNP/PNP matched double transistors 4. Marking [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 5. Limiting values [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. Table 5. Marking codes Type number Marking code[1] BCM856BS *BS BCM856BS/DG PB* BCM856DS DS BCM856DS/DG R9 Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per transistor VCBO collector-base voltage open emitter - −80 V VCEO collector-emitter voltage open base - −65 V VEBO emitter-base voltage open collector - −5V IC collector current - −100 mA ICM peak collector current single pulse; tp ≤ 1ms - −200 mA Ptot total power dissipation Tamb ≤ 25 °C BCM856BS (SOT363) BCM856BS/DG (SOT363) [1] - 200 mW BCM856DS (SOT457) BCM856DS/DG (SOT457) [1] - 250 mW Per device Ptot total power dissipation Tamb ≤ 25 °C BCM856BS (SOT363) BCM856BS/DG (SOT363) [1] - 300 mW BCM856DS (SOT457) BCM856DS/DG (SOT457) [1] - 380 mW Tj junction temperature - 150 °C Tamb ambient temperature −55 +150 °C Tstg storage temperature −65 +150 °C |
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