2002 Feb 04

3

NXP Semiconductors

Product data sheet

PNP general purpose transistors

BC856W; BC857W; BC858W

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 60134).

Note

1.

Refer to SOT323 standard mounting conditions.

THERMAL CHARACTERISTICS

Note

1.

Refer to SOT323 standard mounting conditions.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

collector-base voltage

open emitter

BC856W

−

−80

V

BC857W

−

−50

V

BC858W

−

−30

V

collector-emitter voltage

open base

BC856W

−

−65

V

BC857W

−

−45

V

BC858W

−

−30

V

emitter-base voltage

open collector

−

−5

V

collector current (DC)

−

−100

mA

peak collector current

−

−200

mA

peak base current

−

−200

mA

total power dissipation

−

200

mW

storage temperature

−65

+150

°C

junction temperature

−

150

°C

operating ambient temperature

−65

+150

°C

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

thermal resistance from junction to

ambient

in free air; note 1

625

K/W