74LVC1G58GM datasheet(7/18 Pages) NXP

Part #	74LVC1G58GM

Description	Low-power configurable multiple function gate

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Manufacturer	NXP [NXP Semiconductors]

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74LVC1G58_4

Product data sheet

Rev. 04 — 27 April 2009

7 of 18

NXP Semiconductors

74LVC1G58

Low-power conﬁgurable multiple function gate

[1]

Typical values are measured at maximum VCC and Tamb =25 °C.

11. Dynamic characteristics

[1]

Typical values are measured at nominal VCC and at Tamb =25 °C.

[2]

tpd is the same as tPLH and tPHL

[3]

CPD is used to determine the dynamic power dissipation (PD in µW).

PD = CPD × VCC2 × fi × N + Σ(CL × VCC2 × fo) where:

fi = input frequency in MHz;

fo = output frequency in MHz;

CL = output load capacitance in pF;

VCC = supply voltage in V;

N = number of inputs switching;

Σ(C

L × VCC

2

× f

o) = sum of outputs.

IOFF

power-off leakage current VI or VO = 5.5 V; VCC = 0 V

-

±200

µA

ICC

supply current

VI = 5.5 V or GND;

VCC = 1.65 V to 5.5 V; IO =0A

-

200

µA

∆ICC

additional supply current

VI =VCC − 0.6 V; IO =0A;

VCC = 2.3 V to 5.5 V

-

5000

µA

Table 8.

Static characteristics …continued

At recommended operating conditions; voltages are referenced to GND (ground = 0 V).

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Table 9.

Dynamic characteristics

Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 13.

Symbol Parameter

Conditions

−40 °C to +85 °C

−40 °C to +125 °C Unit

Min

Typ[1]

Max

Min

Max

tpd

propagation delay

A, B, C to Y; see Figure 12

[2]

VCC = 1.65 V to 1.95 V

1.0

6.0

14.4

1.0

18.0

ns

VCC = 2.3 V to 2.7 V

0.5

3.5

8.3

0.5

10.4

ns

VCC = 2.7 V

0.5

4.2

8.5

0.5

10.6

ns

VCC = 3.0 V to 3.6 V

0.5

3.8

6.3

0.5

7.9

ns

VCC = 4.5 V to 5.5 V

0.5

3.0

5.1

0.5

6.4

ns

CPD

power dissipation

capacitance

VCC = 3.3 V; VI = GND to VCC

[3]

-20-

-

pF

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