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bq24153YFFT Datasheet(PDF) 5 Page - Texas Instruments |
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bq24153YFFT Datasheet(HTML) 5 Page - Texas Instruments |
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5 / 40 page  bq24153 bq24156, bq24158 www.ti.com SLUSA27 – MARCH 2010 ELECTRICAL CHARACTERISTICS Circuit of Figure 1, VBUS = 5 V, HZ_MODE = 0, OPA_MODE = 0 (CD = 0), TJ = –40°C to 125°C, TJ = 25°C for typical values (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT INPUT CURRENTS VBUS > VBUS(min), PWM switching 10 mA I(VBUS) VBUS supply current control VBUS > VBUS(min), PWM NOT switching 5 0°C < TJ < 85°C, CD=1 or HZ_MODE=1 15 23 mA 0°C < TJ < 85°C, V(CSOUT) = 4.2 V, High Impedance I(vbus_leak) Leakage current from battery to VBUS pin 5 mA mode, VBUS=0 V 0°C < TJ < 85°C, V(CSOUT) = 4.2 V, High Impedance Battery discharge current in High mode, V(BUS) = 0 V, SCL, SDA, OTG = 0 V 23 mA Impedance mode, (CSIN, CSOUT, SW pins) or 1.8 V VOLTAGE REGULATION V(OREG) Output regulation voltage progrmmable Operating in voltage regulation, programmable 3.5 4.44 V range TA = 25°C –0.5% 0.5% Voltage regulation accuracy –1% 1% CURRENT REGULATION (FAST CHARGE) bq24153, V(LOWV) ≤ V(CSOUT) < V(OREG), 550 VBUS > V(SLP), R(SNS) = 68 mΩ, LOW_CHG=0, 1250 mA Programmable Output charge current programmable range bq24156, V(LOWV) ≤ V(CSOUT) < V(OREG), 550 IO(CHARGE) VBUS > V(SLP), R(SNS) = 68 mΩ, LOW_CHG=0, 1550 mA Programmable VLOWV ≤ VCSOUT < VOREG, VBUS>VSLP, RSNS=68 mΩ, 325 Low charge current 350 mA LOW_CHG=1 Regulation accuracy of the voltage across 37.4 mV ≤ V(IREG)< 44.2mV –3.5% 3.5% R(SNS) (for charge current regulation) 44.2 mV ≤ V(IREG) -3% 3% V(IREG) = IO(CHARGE) × R(SNS) WEAK BATTERY DETECTION V(LOWV) Weak battery voltage threshold 3.4 3.7 V Adjustable using I2C control programmable range Weak battery voltage accuracy –5% 5% Hysteresis for V(LOWV) Battery voltage falling 100 mV Deglitch time for weak battery threshold Rising voltage, 2-mV over drive, tRISE = 100 ns 30 ms CD, OTG and SLRST PIN LOGIC LEVEL VIL Input low threshold level 0.4 V VIH Input high threshold level 1.3 V I(bias) Input bias current Voltage on control pin is 5 V 1.0 µA CHARGE TERMINATION DETECTION Termination charge current programmable V(CSOUT) > V(OREG) – V(RCH), mA I(TERM) 50 400 range VBUS > V(SLP), R(SNS) = 68 mΩ, Programmable Deglitch time for charge termination Both rising and falling, 2-mV overdrive, 30 ms tRISE, tFALL = 100 ns 3.4 mV ≤ V(IREG_TERM) ≤ 6.8 mV –15% 15% Regulation accuracy for termination current across R(SNS) 6.8 mV < V(IREG_TERM) ≤ 17 mV –10% 10% V(IREG_TERM) = IO(TERM) × R(SNS) 17 mV < V(IREG_TERM) ≤ 27.2 mV –5.5% 5.5% Copyright © 2010, Texas Instruments Incorporated Submit Documentation Feedback 5 Product Folder Link(s): bq24153 bq24156 bq24158 |
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