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HAL516UA-A Datasheet(PDF) 7 Page - Micronas |
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HAL516UA-A Datasheet(HTML) 7 Page - Micronas |
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7 / 48 page  DATA SHEET HAL 5xy Micronas Jan. 11. 2010; DSH000020_004EN 7 2. Functional Description The HAL 5xx sensors are monolithic integrated circuits which switch in response to magnetic fields. If a mag- netic field with flux lines perpendicular to the sensitive area is applied to the sensor, the biased Hall plate forces a Hall voltage proportional to this field. The Hall voltage is compared with the actual threshold level in the comparator. The temperature-dependent bias increases the supply voltage of the Hall plates and adjusts the switching points to the decreasing induc- tion of magnets at higher temperatures. If the magnetic field exceeds the threshold levels, the open drain out- put switches to the appropriate state. The built-in hys- teresis eliminates oscillation and provides switching behavior of output without bouncing. Magnetic offset caused by mechanical stress is com- pensated for by using the “switching offset compensa- tion technique”. Thus, an internal oscillator provides a two-phase clock. The Hall voltage is sampled at the end of the first phase. At the end of the second phase, both sampled and actual Hall voltages are averaged and compared with the actual switching point. Subse- quently, the open drain output switches to the appropri- ate state. The time from crossing the magnetic switch- ing level to switching of output can vary between zero and 1/fosc. Shunt protection devices clamp voltage peaks at the output pin and VDD pin together with external series resistors. Reverse current is limited at the VDD pin by an internal series resistor up to −15 V. No external reverse protection diode is needed at the VDD pin for reverse voltages ranging from 0 V to −15 V. Fig. 2–1: HAL 5xx block diagram Fig. 2–2: Timing diagram HAL 5xx Temperature Dependent Bias Switch Hysteresis Control Comparator Output VDD 1 OUT 3 Clock Hall Plate GND 2 HAL 5xy Short Circuit & Overvoltage Protection Reverse Voltage & Overvoltage Protection t VOL VOUT 1/fosc = 16 μs VOH B BON fosc t t tf t IDD t |
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