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74AUP2G38GT Datasheet(PDF) 1 Page - NXP Semiconductors

Part # 74AUP2G38GT
Description  Low-power dual 2-input NAND gate; open drain
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Manufacturer  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors

74AUP2G38GT Datasheet(HTML) 1 Page - NXP Semiconductors

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1.
General description
The 74AUP2G38 provides the dual 2-input NAND gate with open-drain output. The output
of the device is an open drain and can be connected to other open-drain outputs to
implement active-LOW wired-OR or active-HIGH wired-AND functions.
Schmitt trigger action at all inputs makes the circuit tolerant to slower input rise and fall
times across the entire VCC range from 0.8 V to 3.6 V.
This device ensures a very low static and dynamic power consumption across the entire
VCC range from 0.8 V to 3.6 V.
This device is fully specified for partial Power-down applications using IOFF. The IOFF
circuitry disables the output, preventing a damaging backflow current through the device
when it is powered down.
2.
Features
I Wide supply voltage range from 0.8 V to 3.6 V
I High noise immunity
I Complies with JEDEC standards:
N JESD8-12 (0.8 V to 1.3 V)
N JESD8-11 (0.9 V to 1.65 V)
N JESD8-7 (1.2 V to 1.95 V)
N JESD8-5 (1.8 V to 2.7 V)
N JESD8-B (2.7 V to 3.6 V)
I ESD protection:
N HBM JESD22-A114F Class 3A exceeds 5000 V
N MM JESD22-A115-A exceeds 200 V
N CDM JESD22-C101D exceeds 1000 V
I Low static power consumption; ICC = 0.9 µA (maximum)
I Latch-up performance exceeds 100 mA per JESD78B Class II
I Inputs accept voltages up to 3.6 V
I Low noise overshoot and undershoot < 10 % of VCC
I IOFF circuitry provides partial Power-down mode operation
I Multiple package options
I Specified from −40 °C to +85 °C and −40 °C to +125 °C
74AUP2G38
Low-power dual 2-input NAND gate; open drain
Rev. 04 — 8 October 2009
Product data sheet


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