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74AHC1G09GW Datasheet(PDF) 4 Page - NXP Semiconductors |
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74AHC1G09GW Datasheet(HTML) 4 Page - NXP Semiconductors |
4 / 10 page 74AHC1G09_2 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 02 — 18 December 2007 4 of 10 NXP Semiconductors 74AHC1G09 2-input AND gate with open-drain output 11. Dynamic characteristics [1] tpd is the same as tPZL and tPLZ. [2] Typical values are measured at VCC = 3.3 V. [3] Typical values are measured at VCC = 5.0 V. [4] CPD is used to determine the dynamic power dissipation (PD in µW). PD =CPD × VCC2 × fi × N + (CL × VCC2 × fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; VCC = supply voltage in V; N = number of inputs switching; (CL × VCC2 × fo) = dissipation due to the output if the combination of the pull up voltage and resistance results in VCC at the output. VOL LOW-level output voltage VI = VIH or VIL IO = 50 µA; VCC = 2.0 V - 0 0.1 - 0.1 - 0.1 V IO = 50 µA; VCC = 3.0 V - 0 0.1 - 0.1 - 0.1 V IO = 50 µA; VCC = 4.5 V - 0 0.1 - 0.1 - 0.1 V IO = 4.0 mA; VCC = 3.0 V - - 0.36 - 0.44 - 0.55 V IO = 8.0 mA; VCC = 4.5 V - - 0.36 - 0.44 - 0.55 V II input leakage current VI = 5.5 V or GND; VCC = 0 V to 5.5 V -- ±0.1 - ±1.0 - ±2.0 µA IOZ OFF-state output current VI = VIH or VIL; VO = VCC or GND; VCC = 5.5 V -- ±0.25 ±2.5 ±10.0 µA ICC supply current VI =VCC or GND; IO = 0 A; VCC = 5.5 V - - 1.0 - 10 - 20 µA CI input capacitance - 1.5 10 - 10 - 10 pF Table 7. Static characteristics …continued Voltages are referenced to GND (ground = 0 V). Symbol Parameter Conditions 25 °C −40 °C to +85 °C −40 °C to +125 °C Unit Min Typ Max Min Max Min Max Table 8. Dynamic characteristics GND = 0 V; for test circuit see Figure 6. Symbol Parameter Conditions 25 °C −40 °C to +85 °C −40 °C to +125 °C Unit Min Typ Max Min Max Min Max tpd propagation delay A and B to Y; see Figure 5 [1] VCC = 3.0 V to 3.6 V [2] CL = 15 pF - 4.6 7.5 1.0 8.5 1.0 9.0 ns CL = 50 pF - 6.5 11.0 1.5 12.0 1.5 12.5 ns VCC = 4.5 V to 5.5 V [3] CL = 15 pF - 3.2 5.5 1.0 6.5 1.0 7.0 ns CL = 50 pF - 4.6 7.5 1.5 8.0 1.5 8.5 ns CPD power dissipation capacitance CL = 50 pF; fi = 1 MHz; VI = GND to VCC [4] -5- - - - - pF |
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