SOT23 PNP SILICON PLANAR

HIGH VOLTAGE TRANSISTOR

ISSUE 3 - OCTOBER 1995

COMPLEMENTARY TYPE FMMT497

PARTMARKING DETAIL - 597

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

VALUE

UNIT

Collector-Base Voltage

-300

V

Collector-Emitter Voltage

-300

V

Emitter-Base Voltage

-5

V

Peak Pulse Current

-1

A

Continuous Collector Current

-0.2

A

Base Current

-200

mA

500

mW

Operating and Storage Temperature Range

-55 to +150

°C

PARAMETER

SYMBOL MIN.

MAX. UNITCONDITIONS.

Collector-Base Breakdown Voltage

V

Collector-Emitter Breakdown Voltage

V

Emitter-Base Breakdown Voltage

V

Collector Cut-Off Current

-100

Emitter Cut-Off Current

-100

Collector-Emitter Cut-Off Current

-100

Emitter Saturation Voltages

-0.25

-0.25

V

V

-1.0

V

Base-Emitter Turn-on Voltage

-0.85 V

100

100

100

300

Transition Frequency

75

f=100MHz

Output Capacitance

10

pF

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%

Spice parameter data is available upon request for this device

FMMT597

C

B

E

3 - 145

FMMT597

3 - 146

0

0.2

100mA

10mA

0.4

0.6

0.8

0.9

1A

1mA

100mA

10mA

1A

80

0

240

160

320

10mA

1mA

100mA

1A

0.6

0.8

0.9

0.4

0.2

0

1mA

0

0.1

100mA

10mA

0.2

0.3

0.4

1A

1

0.1

Safe Operating Area

10

100

1

1mA

0.01

0.4

0.6

1A

10mA

100mA

1mA

0.4

0

0.1

0.5

0.3

0.2

0.6

1000

0.001

+25°C

-55° C

+100° C

+25° C

+100° C

+25° C

-55° C

-55° C

+25° C

+100° C

DC

100ms

1s

10ms

1ms

-55° C

+25° C

+100° C

TYPICAL CHARACTERISTICS