Part Name
         Description
FCX705

 120V NPN SILICON HIGH VOLTAGE DARLINGTON TRANSISTOR ( 5 Page)


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ISSUE 2 - AUGUST 2001
FCX705
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient (a)
RθJA
125
°C/W
Junction to Ambient (b)
RθJA
45
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 5 secs.
2
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
LIMIT NPN
UNIT
Collector-Base Voltage
VCBO
-140
V
Collector-Emitter Voltage
VCEO
-120
V
Emitter-Base Voltage
VEBO
-10
V
Peak Pulse Current
ICM
-4
A
Continuous Collector Current
IC
-1
A
Power Dissipation at TA=25°C (a)
Linear Derating Factor
PD
1
8
W
mW/°C
Power Dissipation at TA=25°C (b)
Linear Derating Factor
PD
2.8
22
W
mW/°C
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C



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