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FCX1147 Datasheet(PDF) 2 Page - Zetex Semiconductors |
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FCX1147 Datasheet(HTML) 2 Page - Zetex Semiconductors |
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2 / 3 page  ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL VALUE UNIT CONDITIONS. MIN. TYP. MAX. Collector-Base Breakdown Voltage V(BR)CBO -15 V IC=-100µA Collector-Emitter Breakdown Voltage V(BR)CES -12 V IC=-100µA Collector-Emitter Breakdown Voltage V(BR)CEO -12 V IC=-10mA Collector-Emitter Breakdown Voltage V(BR)CEV -12 V IC=-100µA, VEB=+1V Emitter-Base Breakdown Voltage V(BR)EBO -5 V IE=-100µA Collector Cut-Off Current ICBO -0.3 -10 nA VCB=-12V Emitter Cut-Off Current IEBO -0.3 -10 nA VEB=-4V Collector Emitter Cut-Off Current ICES -0.3 -10 nA VCES=-10V Collector-Emitter Saturation Voltage VCE(sat) -25 -70 -90 -115 -160 -250 -50 -110 -130 -170 -250 -400 mV mV mV mV mV IC=-0.1A, IB=-1mA* IC=-0.5A, IB=-2.5mA* IC=-1A, IB=-6mA* IC=-2A, IB=-20mA* IC=-3A, IB=-30mA* IC=-5A, IB=-50mA* Base-Emitter Saturation Voltage VBE(sat) -820 -1000 mV IC=-3A, IB=-30mA* Base-Emitter Turn-On Voltage VBE(on) -770 -950 mV IC=-3A, VCE=-2V* Static Forward Current Transfer Ratio hFE 270 250 200 200 150 90 450 400 340 300 245 145 50 850 IC=-10mA, VCE=-2V* IC=-0.5A, VCE=-2V* IC=-2.0A, VCE=-2V* IC=-3.0A, VCE=-2V* IC=-5.0A, VCE=-2V* IC=-10.0A, VCE=-2V* IC=-20.0A, VCE=-2V* Transition Frequency fT 115 MHz IC=-50mA, VCE=-10V f=50MHz Output Capacitance Ccb 80 pF VCB=-10V, f=1MHz Switching Times ton 150 ns IC=-4A, IB=-40mA, VCC=-10V toff 220 ns IC=-4A, IB=−40mA, VCC=-10V *Measured under pulsed conditions. Pulse width=300 µs. Duty cycle ≤ 2% FCX1147A |
Similar Part No. - FCX1147 |
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Similar Description - FCX1147 |
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