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| FCX1051A |
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ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL Min Typ Max UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO 150 V IC=100µA Collector-Emitter Breakdown Voltage VCES 150 V IC=100µA Collector-Emitter Breakdown Voltage VCEO 40 V IC=10mA Collector-Emitter Breakdown Voltage VCEV 150 V IC=100µA, VEB=1V Emitter-Base Breakdown Voltage V(BR)EBO 5V IE=100µA Collector Cut-Off Current ICBO 0.3 10 nA VCB=120V Emitter Cut-Off Current IEBO 0.3 10 nA VEB=4V Collector Emitter Cut-Off Current ICES 0.3 10 nA VCES=120V Collector-Emitter Saturation Voltage VCE(sat) 17 85 140 170 250 25 120 180 250 340 mV mV mV mV mV IC=0.2A, IB=10mA* IC=1A, IB=10mA* IC=2A, IB=20mA* IC=3A, IB=40mA* IC=5A, IB=100mA* Base-Emitter Saturation Voltage VBE(sat) 880 1000 mV IC=3A, IB=40mA* Base-Emitter Turn-On Voltage VBE(on) 840 950 mV IC=3A, VCE=2V* Static Forward Current Transfer Ratio hFE 290 270 270 130 40 440 450 360 220 55 1200 IC=10mA, VCE=2V* IC=1A, VCE=2V* IC=3A, VCE=2V* IC=5A, VCE=2V* IC=10A, VCE=2V* Transition Frequency fT 155 MHz IC=50mA, VCE=10V f=100MHz Output Capacitance Cobo 27 40 pF VCB=10V, f=1MHz Switching Times ton 220 ns IC=3A, IB=30mA, VCC=10V toff 540 ns IC=3A, IB=30mA, VCC=10V *Measured under pulsed conditions. Pulse width=300 µs. Duty cycle ≤ 2% FCX1051A |
