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TPS2456RHH Datasheet(PDF) 3 Page - Texas Instruments

Part # TPS2456RHH
Description  Dual 12 V Protection / Blocking Controller
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Manufacturer  TI [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI - Texas Instruments

TPS2456RHH Datasheet(HTML) 3 Page - Texas Instruments

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TPS2456
www.ti.com
SLVSA78A – MARCH 2010 – REVISED MARCH 2010
RECOMMENDED OPERATING CONDITIONS
Over recommended junction temperature range and all voltages referenced to GND, unless otherwise noted.
MIN
TYP
MAX
UNIT
VINx
8.5
12
15
V
IMONx
100
1000
µA
GAT1x, GAT2x board leakage current(1)
–1
1
µA
VINT bypass capacitance
1
100
250
nF
Operating junction temperature range, TJ
–40
125
°C
(1)
This condition applies to the PCB and is not a limit on the TPS2456.
ELECTRICAL CHARACTERISTICS
Common conditions (unless otherwise noted) are: INA = INB = SENPA = SENPB = SENMA = SENMB = SETPA = SETPB =
12 V, ENA = ENB = ORENA = ORENB = 3 V, CTA = CTB = GND, RMONA = RMONB = 6.81kΩ, all other pins open,
–40°C
≤ TJ ≤ 125°C
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Enable Input – ENx, ORENx
Threshold voltage
VINx
1.25
1.35
1.45
V
Hysteresis
20
50
80
mV
Pullup current
ENx = ORENx = 0 V, current sourcing
5
8
15
µA
Input bias current
ENx = ORENx = 17 V, current sinking
6
15
µA
Turn off time(1) (2)
ENx deasserts to VOUTx < 1 V, COUT = 0 µF, QGAT1x = 33 nF
20
µs
Power Good Output – PGx
Output low voltage
IPGx = 2 mA sinking
0.14
0.25
V
Leakage current
PGx = 17 V (sinking)
1
µA
Threshold voltage
PGx, VOUTx
10.2
10.5
10.8
V
Hysteresis
PGx, VOUTx
130(2)
mV
Deglitch time
PGx falling
50
100
150
µs
Fault Output – FLTx
Output low voltage
IFLTx = 2 mA sinking
0.14
0.25
V
Leakage current
VFLTx = 17 V (sinking)
1
µA
Bias Supply – VINT
Output voltage
0 < IVINT < 50 µA
2
2.3
2.8
V
Fault Timer – CTx
Sourcing current
VCTx = 0 V, during fault
7
10
13
µA
Upper threshold voltage
1.30
1.35
1.40
V
Discharge pulldown(2)
200
Ω
(VGAT1x – VINx) when timer starts, with VGAT1x falling due to over
Timer start threshold
5
6
7
V
current
Channel Current Monitor – MONx
10.8 V
≤ VSENMx ≤ 13.2 V, VSENPx = VSENMx + 50 mV,
Input referred offset
–1.5
1.5
mV
measure VSETx – VSENMx
MONx threshold
VGAT1x = 15 V
0.66
0.675
0.69
V
Leakage current
VSETx = (VSENMx – 10 mV)
1
µA
(1)
Tested with HAT2156 MOSFET.
(2)
These parameters are provided for reference only, and do not constitute part of TI's published device specifications for purposes of TI's
product warranty.
Copyright © 2010, Texas Instruments Incorporated
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3
Product Folder Link(s): TPS2456


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