SSM9973GM datasheet(2/5 Pages) SSC

Part #	SSM9973GM

Description	Dual N-channel Enhancement-mode Power MOSFETs

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Manufacturer	SSC [Silicon Standard Corp.]

Direct Link	http://www.siliconstandard.com

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12/10/2004 Rev.2.03

ELECTRICAL CHARACTERISTICS @ T = 25 C (unless otherwise specified)

j

o

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

BVDSS

Drain-Source Breakdown Voltage

VGS=0V, ID=250uA

60

-

V

∆BV

DSS/

∆Tj

Breakdown Voltage Temperature Coefficient

Reference to 25°C, ID=1mA

-

0.06

-

V/°C

RDS(ON)

Static Drain-Source On-Resistance

2

VGS=10V, ID=3.9A

-

80

m

Ω

VGS=4.5V, ID=2A

-

100

m

Ω

VGS(th)

Gate Threshold Voltage

VDS=VGS, ID=250uA

1

-

3

V

gfs

Forward Transconductance

VDS=10V, ID=3.9A

-

3.5

-

S

IDSS

Drain-Source Leakage Current (Tj=25

oC)

VDS=60V, VGS=0V

-

1

uA

Drain-Source Leakage Current (Tj=70

oC)

VDS=48V ,VGS=0V

-

25

uA

IGSS

Gate-Source Leakage

VGS=-

-

nA

Qg

Total Gate Charge

2

ID=3.9A

-

8

13

nC

Qgs

Gate-Source Charge

VDS=48V

-

2

-

nC

Qgd

Gate-Drain ("Miller") Charge

VGS=4.5V

-

4

-

nC

td(on)

Turn-on Delay Time

2

VDS=30V

-

8

-

ns

tr

Rise Time

ID=1A

-

4

-

ns

td(off)

Turn-off Delay Time

RG=3.3Ω , VGS=10V

-

20

-

ns

tf

Fall Time

RD=30Ω

-

6

-

ns

Ciss

Input Capacitance

VGS=0V

-

700

1120

pF

Coss

Output Capacitance

VDS=25V

-

80

-

pF

Crss

Reverse Transfer Capacitance

f=1.0MHz

-

50

-

pF

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

VSD

Forward On Voltage

2

IS=3.9A, VGS=0V

-

1.2

V

t

rr

Reverse Recovery Time

IS=3.9A, VGS=0V,

-

28

-

ns

Qrr

Reverse Recovery Charge

dI/dt=100A/µs

-

35

-

nC

Notes:

1.Pulse width limited by maximum junction temperature.

2.Pulse width <300us, duty cycle <2%.

3.Surface-mounted on 1 in

2 copper pad of FR4 board ; 135°C/W when mounted on minimum copper pad.

± 20V

±100

SSM9973GM

SOURCE-DRAIN DIODE

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