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SSM9973GM Datasheet(PDF) 2 Page - Silicon Standard Corp. |
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SSM9973GM Datasheet(HTML) 2 Page - Silicon Standard Corp. |
2 / 5 page www.SiliconStandard.com 2 of 5 12/10/2004 Rev.2.03 ELECTRICAL CHARACTERISTICS @ T = 25 C (unless otherwise specified) j o Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 60 - - V ∆BV DSS/ ∆Tj Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=1mA - 0.06 - V/°C RDS(ON) Static Drain-Source On-Resistance 2 VGS=10V, ID=3.9A - - 80 m Ω VGS=4.5V, ID=2A - - 100 m Ω VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance VDS=10V, ID=3.9A - 3.5 - S IDSS Drain-Source Leakage Current (Tj=25 oC) VDS=60V, VGS=0V - - 1 uA Drain-Source Leakage Current (Tj=70 oC) VDS=48V ,VGS=0V - - 25 uA IGSS Gate-Source Leakage VGS=- - nA Qg Total Gate Charge 2 ID=3.9A - 8 13 nC Qgs Gate-Source Charge VDS=48V - 2 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 4 - nC td(on) Turn-on Delay Time 2 VDS=30V - 8 - ns tr Rise Time ID=1A - 4 - ns td(off) Turn-off Delay Time RG=3.3Ω , VGS=10V - 20 - ns tf Fall Time RD=30Ω - 6 - ns Ciss Input Capacitance VGS=0V - 700 1120 pF Coss Output Capacitance VDS=25V - 80 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 50 - pF Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage 2 IS=3.9A, VGS=0V - - 1.2 V t rr Reverse Recovery Time IS=3.9A, VGS=0V, - 28 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 35 - nC Notes: 1.Pulse width limited by maximum junction temperature. 2.Pulse width <300us, duty cycle <2%. 3.Surface-mounted on 1 in 2 copper pad of FR4 board ; 135°C/W when mounted on minimum copper pad. ± 20V ±100 SSM9973GM SOURCE-DRAIN DIODE |
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