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SSM9972GI Datasheet(PDF) 4 Page - Silicon Standard Corp. |
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SSM9972GI Datasheet(HTML) 4 Page - Silicon Standard Corp. |
4 / 5 page www.SiliconStandard.com 4 of 5 SSM9972GI 9/20/2006 Rev.3.1 Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform Q VG 4.5V QGS QGD QG Charge 0 2 4 6 8 10 12 020 40 60 80 Q G , Total Gate Charge (nC) V DS =48V V DS =38V V DS =30V I D =23 A 0 20 40 60 80 100 02 46 8 V GS , Gate-to-Source Voltage (V) T j =150 o C T j =25 o C V DS =5V 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , Pulse Width (s) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + TC t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse 0.1 1 10 100 1000 0.1 1 10 100 1000 V DS , Drain-to-Source Voltage (V) T C =25 o C Single Pulse 100us 1ms 10ms 100ms DC 100 1000 10000 1 5 9 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) f=1.0MHz C iss C oss C rss |
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