SSM9926TGO

03/11/2007 Rev.1.00

www.SiliconStandard.com

1

N-CHANNEL ENHANCEMENT MODE

POWER MOSFET

PRODUCT SUMMARY

Low on-resistance

Capable of 2.5V gate drive

Surface mount package

DESCRIPTION

The Advanced Power MOSFETs from Silicon Standard Corp.

provide the designer with the best combination of fast switching,

ruggedized device design, ultra low on-resistance and

cost-effectiveness.

D2

S2

S2

G2

D1

S1

S1

G1

TSSOP-8

G2

D2

S2

G1

D1

S1

Pb-free; RoHS-compliant

20V

32mΩ

4.7A

Symbol

Units

V

V

A

A

A

W

W/℃

℃

℃

Symbol

Value

Unit

Rthj-a

Thermal Resistance Junction-ambient

3

Max.

125

℃/W

Parameter

Rating

Drain-Source Voltage

20

Gate-Source Voltage

±12

Continuous Drain Current

3

4.7

Continuous Drain Current

3

3.8

Pulsed Drain Current

1

20

Total Power Dissipation

1

Linear Derating Factor

0.008

Storage Temperature Range

-55 to 150

Operating Junction Temperature Range

-55 to 150

Parameter

ABSOLUTE MAXIMUM RATINGS

THERMAL DATA