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SSM9916J Datasheet(PDF) 2 Page - Silicon Standard Corp. |
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SSM9916J Datasheet(HTML) 2 Page - Silicon Standard Corp. |
2 / 6 page www.SiliconStandard.com 2 of 6 SSM9916H,J Electrical Characteristics @ T j=25 oC (unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 18 - - V ∆BV DSS/∆ Tj Breakdown Voltage Temperature Coefficient Reference to 25°C, I D=1mA - 0.03 - V/°C RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=6A - - 25 m Ω VGS=2.5V, ID=5.2A - - 40 m Ω VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 0.5 - 1 V gfs Forward Transconductance VDS=10V, ID=6A - 18 - S IDSS Drain-Source Leakage Current (Tj=25 oC) VDS=18V, VGS=0V - - 1 uA Drain-Source Leakage Current (Tj=125 oC) VDS=18V ,VGS=0V - - 25 uA IGSS Gate-Source Leakage VGS=- - nA Qg Total Gate Charge 2 ID=18A - 17.5 - nC Qgs Gate-Source Charge VDS=18V - 1.2 - nC Qgd Gate-Drain ("Miller") Charge VGS=5V - 7.9 - nC td(on) Turn-on Delay Time 2 VDS=10V - 7.3 - ns tr Rise Time ID=18A - 98 - ns td(off) Turn-off Delay Time RG=3.3 Ω ,VGS=5V - 25.6 - ns tf Fall Time RD=0.56Ω - 98 - ns Ciss Input Capacitance VGS=0V - 527 - pF Coss Output Capacitance VDS=18V - 258 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 112 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units IS Continuous Source Current ( Body Diode ) VD=VG=0V , VS=1.3V - - 35 A ISM Pulsed Source Current ( Body Diode ) 1 -- 90 A VSD Forward On Voltage 2 Tj=25°C, IS=35A, VGS=0V - - 1.3 V Notes: 1.Pulse width limited by safe operating area. 2.Pulse width <300us , duty cycle <2%. ± 12V ±100 Rev.2.02 1/29/2004 |
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