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SSM9475M Datasheet(PDF) 4 Page - Silicon Standard Corp. |
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SSM9475M Datasheet(HTML) 4 Page - Silicon Standard Corp. |
4 / 5 page www.SiliconStandard.com 4 of 5 Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform td(on) tr td(off)tf VDS VGS 10% 90% Q VG 4.5V QGS QGD QG Charge 100 1000 10000 1 5 9 1317 2125 29 V DS , Drain-to-Source Voltage (V) f=1.0MHz C iss C oss C rss 0 2 4 6 8 10 12 14 0 10 2030 4050 Q G , Total Gate Charge (nC) V DS = 30 V V DS = 38 V V DS = 48 V I D = 6 A 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja = 125°C/W t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse 0.01 0.1 1 10 100 0.1 1 10 100 1000 V DS , Drain-to-Source Voltage (V) 1ms 10ms 100ms 1s DC T A =25 o C Single Pulse SSM9475M 3/21/2005 Rev.2.01 |
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