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SSM9435GH Datasheet(PDF) 2 Page - Silicon Standard Corp. |
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SSM9435GH Datasheet(HTML) 2 Page - Silicon Standard Corp. |
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2 / 5 page  www.SiliconStandard.com 2 of 5 SSM9435GH,J 2/16/2005 Rev.2.1 Electrical Characteristics @ T j=25°C (unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250uA -30 - - V ∆BV DSS/ ∆Tj Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=-1mA - -0.1 - V/°C RDS(ON) Static Drain-Source On-Resistance 2 VGS=-10V, ID=-10A - - 50 m Ω VGS=-4.5V, ID=-5A - - 90 m Ω VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -1 - -3 V gfs Forward Transconductance VDS=-10V, ID=-10A - 9.6 - S IDSS Drain-Source Leakage Current (Tj=25 oC) VDS=-30V, VGS=0V - - -1 uA Drain-Source Leakage Current (Tj=150 oC) VDS=-24V, VGS=0V - - -25 uA IGSS Gate-Source Leakage VGS=± 20V - - ±100 nA Qg Total Gate Charge 2 ID=-10A - 10 16 nC Qgs Gate-Source Charge VDS=-24V - 3 - nC Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 0.8 - nC td(on) Turn-on Delay Time 2 VDS=-15V - 9.6 - ns tr Rise Time ID=-10A - 18 - ns td(off) Turn-off Delay Time RG=3.3Ω , VGS=-10V - 19 - ns tf Fall Time RD=1.5Ω -14 - ns Ciss Input Capacitance VGS=0V - 463 740 pF Coss Output Capacitance VDS=-25V - 187 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 140 - pF Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage 2 IS=-10A, VGS=0V - - -1.2 V trr Reverse Recovery Time 2 IS=-10A, VGS=0V, - 34 - ns Qrr Reverse Recovery Charge dI/dt=-100A/µs - 30 - nC Notes: 1.Pulse width limited by maximum junction temperature. 2.Pulse width <300us , duty cycle <2%. |
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