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SSM2761P-A Datasheet(PDF) 4 Page - Silicon Standard Corp. |
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SSM2761P-A Datasheet(HTML) 4 Page - Silicon Standard Corp. |
4 / 5 page 05/25/2007 Rev.1.00 www.SiliconStandard.com 4 Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 0 1 10 100 1 10 100 1000 10000 V DS , Drain-to-Source Voltage (V) T C =25 o C Single Pulse 10us 100us 1ms 10ms 100ms 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , Pulse Width (s) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + TC t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse td(on) tr td(off)tf VDS VGS 10% 90% Q VG 10V QGS QGD QG Charge 1 100 10000 1 5 9 1317 2125 29 V DS , Drain-to-Source Voltage (V) f=1.0MHz C iss C oss C rss 0 4 8 12 16 0 20406080 Q G , Total Gate Charge (nC) I D =10A V DS =330V V DS =410V V DS =520V SSM2761P-A |
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