P-CHANNEL ENHANCEMENT MODE

POWER MOSFET

11/16/2007 Rev.1.00

www.SiliconStandard.com

1

PRODUCT SUMMARY

Fast Switching Characteristic

Lower Gate Charge

Small Footprint & Low Profile Package

DESCRIPTION

Advanced Power MOSFETs utilized advanced processing techniques

to achieve the lowest possible on-resistance, extremely efficient

and ost-effectiveness device.

The SOT-26 package is universally used for all commercial- industrial

applications.

ABSOLUTE MAXIMUM RATINGS

Pb-free; RoHS-compliant

-30V

80mΩ

- 4A

G

D

S

D

D

D

D

G

S

SOT-26

Symbol

Units

V

V

A

A

A

W

W/℃

℃

℃

Symbol

Value

Unit

Rthj-a

Thermal Resistance Junction-ambient

3

Max.

62.5

℃/W

Rating

-30

±20

-4

0.016

Continuous Drain Current

3

-3.3

Pulsed Drain Current

1

-20

THERMAL DATA

Parameter

Total Power Dissipation

Operating Junction Temperature Range

Storage Temperature Range

-55 to 150

Linear Derating Factor

2

-55 to 150

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

3

SSM2605GY