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www.SiliconStandard.com 5 of 6 SSM2304N Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics Fig 11. Forward Characteristic of Fig 12. Gate Threshold Voltage vs. Reverse Diode Junction Temperature 10 100 1000 1 5 9 1317 2125 29 VDS (V) f=1.0MHz Ciss Coss Crss 0 1 10 0.1 0.5 0.9 1.3 V SD (V) T j =25 o C T j =150 o C 1.45 1.65 1.85 2.05 2.25 -50 0 50 100 150 Junction Temperature ( o C ) 0 2 4 6 8 10 0 1 23 4 56 Q G , Total Gate Charge (nC) V DS =15V I D =2.5A Rev.2.02 3/11/2004 |
